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Register a new userStatistics of conductance oscillations of a quantum dot in the Coulomb-blockade regime
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The fluctuations and the distribution of the conductance peak spacings of a quantum dot in the Coulomb-blockade regime are studied and compared with the predictions of random matrix theory (RMT). The experimental data were obtained in transport measurements performed on a semiconductor quantum dot fabricated in a GaAs-AlGaAs heterostructure. It is found that the fluctuations in the peak spacings are considerably larger than the mean level spacing in the quantum dot. The distribution of the spacings appears Gaussian both for zero and for non-zero magnetic field and deviates strongly from the RMT-predictions.
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Transient current spectroscopy is proposed and demonstrated in order to investigate the energy relaxation inside a quantum dot in the Coulomb blockade regime. We employ a fast pulse signal to excite an AlGaAs/GaAs quantum dot to an excited state, and analyze the non-equilibrium transient current as a function of the pulse length. The amplitude and time-constant of the transient current are sensitive to the ground and excited spin states. We find that the spin relaxation time is longer than, at least, a few microsecond.
During the last decades, quantum dots within the Coulomb blockade regime of transport have been proposed as essential building blocks for a wide variety of nanomachines. This includes thermoelectric devices, quantum shuttles, quantum pumps, and even quantum motors. However, in this regime, the role of quantum mechanics is commonly limited to provide energy quantization while the working principle of the devices is ultimately the same as their classic counterparts. Here, we study quantum-dot-based nanomachines in the Coulomb blockade regime, but in a configuration where the coherent superpositions of the dots states plays a crucial role. We show that the studied system can be used as the basis for different forms of true quantum machines that should only work in the presence of these coherent superpositions. We analyze the efficiency of these machines against different nonequilibrium sources (bias voltage, temperature gradient, and external driving) and the factors that limit it, including decoherence and the role of the different orders appearing in the adiabatic expansion of the charge/heat currents.
Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.
We investigate the thermoelectric properties of a T-shaped double quantum dot system described by a generalized Anderson Hamiltonian. The systems electrical conduction (G) and the fundamental thermoelectric parameters such as the Seebeck coefficient ($S$) and the thermal conductivity ($kappa$), along with the systems thermoelectric figure of merit (ZT) are numerically estimated based on a Greens function formalism that includes contributions up to the Hartree-Fock level. Our results account for finite onsite Coulomb interaction terms in both component quantum dots and discuss various ways leading to an enhanced thermoelectric figure of merit for the system. We demonstrate that the presence of Fano resonances in the Coulomb blockade regime is responsible for a strong violation of the Wiedemann-Franz law and a considerable enhancement of the systems figure of merit ($ZT$).
Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values corresponding to the mechanical oscillations eigen modes. Physical mechanism of the observed effect is considered. It is presumably connected with oscillations of the mutual electrical capacitances between the quantum dot and surrounding electrodes.
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