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In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with our original result [Ivchenko and Kiselev, Sov. Phys. Semicond. 26, 827 (1992)] and readily conclude that ``the previous theory of the g factor in heterostructures is inadequate. We show here that the entire discrepancy can be tracked down to an additional contribution missing in the incomplete elimination procedure of Pfeffer and Zawadzki. This mistake equally affects their ``exact and approximate results. When the overlooked terms stemming from the nondiagonal Zeeman interaction between light hole and spin-orbit-split valence states are taken into account in the effective electron dispersion, the results of the both approaches applied to the three-level kp model become identical.
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A five-level {Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic field parallel to the growth direction. It is demonstrated that the previous theory of the $g^*$-factor in heterostructures is inadequate. Our approach is based on an iteration procedure of solving 14 coupled differential {Pp} equations. The applicability of the iteration procedure is verified. The final eigenenergy problem for the conduction subbands is reduced to two differential equations for the spin-up and spin-down states of consecutive Landau levels. It is shown that the bulk inversion asymmetry of III-V compounds is of importance for the spin $g^*$-factor. Our theory with no adjustable parameters gives an excellent description of experimental data on the electron spin $g^*$-factor in GaAs/Ga$_{0.67}$Al$_{0.33}$As rectangular quantum wells for different well widths between 3 and 12 nm. The same theory describes very well experimental cyclotron masses in GaAs/Ga$_{0.74}$Al$_{0.26}$As quantum wells for the well widths between 6 and 37 nm.
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.
We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the $g$ factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both metallic and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its intrinsic mechanism in ferromagnetic systems.
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, Dyakonov-Perel, and Bir-Aronov-Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature-dependence of the spin relaxation lifetime agrees well with measured values in GaAs. We further show that the spin lifetimes decrease rapidly with injected electrons energy and reach a local maximum at the longitudinal optical phonon energy. Our calculation predicts that electron spin lifetime in pure GaN is about 3 orders of magnitude longer than in GaAs at all temperatures, primarily as a result of the lower spin-orbit interaction and higher conduction band density of states.
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