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Register a new userCalculations of spin induced transport in ferromagnets
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Based on first-principles density functional calculations, a general approach for determining and analyzing the degree of spin polarization (P) in ferromagnets is presented. The approach employs the so-called tetrahedron method to evaluate the Fermi surface integrations of P in both ballistic and diffusive regimes. The validity of the method is examined by comparing the calculated P values for Fe and Ni with the experiment. The method is shown to yield highly accurate results with minimal computational effort. Within our approach, it is also possible to systematically analyze the contributions of various types of electronic states to the spin induced transport. As a case study, the transport properties of the soft-ferromagnet CeMnNi4 are investigated in order to explain the origin of the existing difference between the experimental and theoretical values of P in this intermetallic compound.
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We present results of a numerical analysis of magnon spectra in supercells simulating two-dimensional and bulk random diluted ferromagnets with long-ranged pair exchange interactions. We show that low-energy spectral regions for these strongly disordered systems contain a coherent component leading to interference phenomena manifested by a pronounced sensitivity of the lowest excitation energies to the adopted boundary conditions. The dependence of configuration averages of these excitation energies on the supercell size can be used for an efficient determination of the spin-wave stiffness D. The developed formalism is applied to the ferromagnetic Mn-doped GaAs semiconductor with optional incorporation of phosphorus; the obtained concentration trends of D are found in reasonable agreement with recent experiments. Moreover, a relation of the spin stiffness to the Curie temperature Tc has been studied for Mn-doped GaAs and GaN semiconductors. It is found that the ratio Tc/D exhibits qualitatively the same dependence on Mn concentration in both systems.
The temperature dependence of the magnetization and spin-polarization at the Fermi level is investigated for half-metallic ferromagnets. We reveal a new mechanism, where the hybridization of states forming the half-metallic gap depends on thermal spin fluctuations and the polarization can drop abruptly at temperatures much lower than the Curie point. We verify this for NiMnSb by ab-initio calculations. The thermal properties are studied by mapping ab-initio results to an extended Heisenberg model which includes longitudinal fluctuations and is solved by a Monte Carlo method.
We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [110] strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction band spin splitting experimentally.
Nitrogen-doped carbon nanotubes can provide reactive sites on the porphyrin-like defects. Its well known that many porphyrins have transition metal atoms, and we have explored transition metal atoms bonded to those porphyrin-like defects in N-doped carbon nanotubes. The electronic structure and transport are analyzed by means of a combination of density functional theory and recursive Greens functions methods. The results determined the Heme B-like defect (an iron atom bonded to four nitrogens) as the most stable and with a higher polarization current for a single defect. With randomly positioned Heme B-defects in a few hundred nanometers long nanotubes the polarization reaches near 100% meaning an effective spin filter. A disorder induced magnetoresistance effect is also observed in those long nanotubes, values as high as 20000% are calculated with non-magnectic eletrodes.
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