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Register a new userEnhanced spin relaxation time due to electron-electron scattering in semiconductors
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We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature-, concentration- and quantum-well-width- dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin life-time with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the Dyakonov-Perel spin relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
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The realization of mixtures of excitons and charge carriers in van-der-Waals materials presents a new frontier for the study of the many-body physics of strongly interacting Bose-Fermi mixtures. In order to derive an effective low-energy model for such systems, we develop an exact diagonalization approach based on a discrete variable representation that predicts the scattering and bound state properties of three charges in two-dimensional transition metal dichalcogenides. From the solution of the quantum mechanical three-body problem we thus obtain the bound state energies of excitons and trions within an effective mass model which are in excellent agreement with Quantum Monte Carlo predictions. The diagonalization approach also gives access to excited states of the three-body system. This allows us to predict the scattering phase shifts of electrons and excitons that serve as input for a low-energy theory of interacting mixtures of excitons and charge carriers at finite density. To this end we derive an effective exciton-electron scattering potential that is directly applicable for Quantum Monte-Carlo or diagrammatic many-body techniques. As an example, we demonstrate the approach by studying the many-body physics of exciton Fermi polarons in transition-metal dichalcogenides, and we show that finite-range corrections have a substantial impact on the optical absorption spectrum. Our approach can be applied to a plethora of many-body phenomena realizable in atomically thin semiconductors ranging from exciton localization to induced superconductivity.
We study the nuclear magnetic relaxation rate and Knight shift in the presence of the orbital and quadrupole interactions for three-dimensional Dirac electron systems (e.g., bismuth-antimony alloys). By using recent results of the dynamic magnetic susceptibility and permittivity, we obtain rigorous results of the relaxation rates $(1/T_1)_{rm orb}$ and $(1/T_1)_{rm Q}$, which are due to the orbital and quadrupole interactions, respectively, and show that $(1/T_1)_{rm Q}$ gives a negligible contribution compared with $(1/T_1)_{rm orb}$. It is found that $(1/T_1)_{rm orb}$ exhibits anomalous dependences on temperature $T$ and chemical potential $mu$. When $mu$ is inside the band gap, $(1/T_1)_{rm orb} sim T ^3 log (2 T/omega_0)$ for temperatures above the band gap, where $omega_0$ is the nuclear Larmor frequency. When $mu$ lies in the conduction or valence bands, $(1/T_1)_{rm orb} propto T k_{rm F}^2 log (2 |v_{rm F}| k_{rm F}/omega_0)$ for low temperatures, where $k_{rm F}$ and $v_{rm F}$ are the Fermi momentum and Fermi velocity, respectively. The Knight shift $K_{rm orb}$ due to the orbital interaction also shows anomalous dependences on $T$ and $mu$. It is shown that $K_{rm orb}$ is negative and its magnitude significantly increases with decreasing temperature when $mu$ is located in the band gap. Because the anomalous dependences in $K_{rm orb}$ is caused by the interband particle-hole excitations across the small band gap while $left( 1/T_1 right)_{rm orb}$ is governed by the intraband excitations, the Korringa relation does not hold in the Dirac electron systems.
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase the spin relaxation time in the system. Created structures allow us to change an effective localization radius of electrons by external magnetic field. With the localization radius close to the size of a quantum dot group, we obtain fourfold increasing spin relaxation time $T_1$, as compared to conventional homogeneous quantum dot arrays. This effect is attributed to averaging of local magnetic fields related to nuclear spins $^{29}$Si and stabilization of $S_z$-polarization during electron back-and-forth motion within a quantum dot group.
In some theoretical analyses of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional systems, the inelastic relaxation time $tau_{in}$ due to electron-electron scattering is evaluated using an equilibrium distribution function $f^0$ in the absence of radiation, and it is concluded that $tau_{in}$ is much larger than $tau_{q}$, the single-particle relaxation time due to impurity scattering. However, under the irradiation of a microwave capable of producing magnetoresistance oscillation, the distribution function of the high-mobility electron gas deviates remarkably from $f^0$ at low temperatures. Estimating $tau_{in}$ using an approximate nonequilibrium distribution function rather than using $f^0$, one will find the system to be in the opposite limit $1/tau_{in}ll 1/tau_{q}$ even for T=0 K. Therefore, models which depend on the assumption $1/tau_{in}gg 1/tau_{q}$ may not be justifiable.
Graphene sheets encapsulated between hexagonal Boron Nitride (hBN) slabs display superb electronic properties due to very limited scattering from extrinsic disorder sources such as Coulomb impurities and corrugations. Such samples are therefore expected to be ideal platforms for highly-tunable low-loss plasmonics in a wide spectral range. In this Article we present a theory of collective electron density oscillations in a graphene sheet encapsulated between two hBN semi-infinite slabs (hBN/G/hBN). Graphene plasmons hybridize with hBN optical phonons forming hybrid plasmon-phonon (HPP) modes. We focus on scattering of these modes against graphenes acoustic phonons and hBN optical phonons, two sources of scattering that are expected to play a key role in hBN/G/hBN stacks. We find that at room temperature the scattering against graphenes acoustic phonons is the dominant limiting factor for hBN/G/hBN stacks, yielding theoretical inverse damping ratios of hybrid plasmon-phonon modes of the order of $50$-$60$, with a weak dependence on carrier density and a strong dependence on illumination frequency. We confirm that the plasmon lifetime is not directly correlated with the mobility: in fact, it can be anti-correlated.
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