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Register a new userDisorder-driven quantum phase transition from antiferromagnetic metal to insulating state in multilayered high-Tc cuprate (Cu,C)Ba2Ca4Cu5Oy
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We report on superconducting(SC) characteristics for oxygen-reduced Cu-based five-layered high-temperature superconductor (Cu,C)Ba2Ca4Cu5Oy(Cu-1245(OPT)), which includes five-fold outer planes (OP) and four-fold inner planes (IP).As a result of the reduction of the carrier density, the bulk SC for Cu-1245 (OPT) takes place at the nearly optimally-doped OP with Tc= 98 K that is different from previously-reported Cu-1245(OVD) where IP plays a primary role for the onset of SC. It gives an evidence that the carrier density of the optimally-doped layer determines its bulk Tc.Static antiferromagnetic(AFM) order is evidenced at IPs by zero-field Cu-NMR at low temperature, irrespective of the SC transition at OPs below 98K. This AFM state at IPs is characterized by a carrier localization at low temperatures due to disorder effect, whereas the carrier densities in each layer are similar to Hg-1245(OPT) where the AFM metallic state are realized in IPs. This finding reinforces the phase diagram in which the AFM metallic phase exists between AFM insulator and SC states for the case of ideally-flat CuO2 plane without disorder.
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We have studied the influence of disorder induced by electron irradiation on the normal state resistivities $rho(T)$ of optimally and underdoped YBa2CuOx single crystals, using pulsed magnetic fields up to 60T to completely restore the normal state. We evidence that point defect disorder induces low T upturns of rho(T) which saturate in some cases at low T in large applied fields as would be expected for a Kondo-like magnetic response. Moreover the magnitude of the upturns is related to the residual resistivity, that is to the concentration of defects and/or their nanoscale morphology. These upturns are found quantitatively identical to those reported in lower Tc cuprates, which establishes the importance of disorder in these supposedly pure compounds. We therefore propose a realistic phase diagram of the cuprates, including disorder, in which the superconducting state might reach the antiferromagnetic phase in the clean limit.
Effects of non-magnetic disorder on the critical temperature T_c and on diamagnetism of quasi-one-dimensional superconductors are reported. The energy of Josephson-coupling between wires is considered to be random, which is typical for dirty organic superconductors. We show that this randomness destroys phase coherence between wires and that T_c vanishes discontinuously at a critical disorder-strength. The parallel and transverse components of the penetration-depth are evaluated. They diverge at different critical temperatures T_c^{(1)} and T_c, which correspond to pair-breaking and phase-coherence breaking respectively. The interplay between disorder and quantum phase fluctuations is shown to result in quantum critical behavior at T=0, which manifests itself as a superconducting-normal metal phase transition of first-order at a critical disorder strength.
In cuprates, the strong correlations in proximity to the antiferromagnetic Mott insulating state give rise to an array of unconventional phenomena beyond high temperature superconductivity. Developing a complete description of the ground state evolution is crucial to decoding the complex phase diagram. Here we use the structure of broken translational symmetry, namely $d$-form factor charge modulations in (Bi,Pb)$_2$(Sr,La)$_2$CuO$_{6+delta}$, as a probe of the ground state reorganization that occurs at the transition from truncated Fermi arcs to a large Fermi surface. We use real space imaging of nanoscale electronic inhomogeneity as a tool to access a range of dopings within each sample, and we definitively validate the spectral gap $Delta$ as a proxy for local hole doping. From the $Delta$-dependence of the charge modulation wavevector, we discover a commensurate to incommensurate transition that is coincident with the Fermi surface transition from arcs to large hole pocket, demonstrating the qualitatively distinct nature of the electronic correlations governing the two sides of this quantum phase transition. Furthermore, the doping dependence of the incommensurate wavevector on the overdoped side is at odds with a simple Fermi surface driven instability.
We report a genuine phase diagram for a disorder-free CuO_2 plane based on the precise evaluation of the local hole density (N_h) by site-selective Cu-NMR studies on five-layered high-Tc cuprates. It has been unraveled that (1) the antiferromagnetic metallic state (AFMM) is robust up to N_h=0.17, (2) the uniformly mixed phase of superconductivity (SC) and AFMM is realized at N_h< 0.17, (3) the tetracritical point for the AFMM/(AFMM+SC)/SC/PM(Paramagnetism) phases may be present at N_h=0.15 and T=75 K, (4) Tc is maximum close to a quantum critical point (QCP) at which the AFM order collapses, suggesting the intimate relationship between the high-Tc SC and the AFM order. The results presented here strongly suggest that the AFM interaction plays the vital role as the glue for the Cooper pairs, which will lead us to a genuine understanding of why the Tc of cuprate superconductors is so high.
Taking the spin-fermion model as the starting point for describing the cuprate superconductors, we obtain an effective nonlinear sigma-field hamiltonian, which takes into account the effect of doping in the system. We obtain an expression for the spin-wave velocity as a function of the chemical potential. For appropriate values of the parameters we determine the antiferromagnetic phase diagram for the YBa$_2$Cu$_3$O$_{6+x}$ compound as a function of the dopant concentration in good agreement with the experimental data. Furthermore, our approach provides a unified description for the phase diagrams of the hole-doped and the electron doped compounds, which is consistent with the remarkable similarity between the phase diagrams of these compounds, since we have obtained the suppression of the antiferromagnetic phase as the modulus of the chemical potential increases. The aforementioned result then follows by considering positive values of the chemical potential related to the addition of holes to the system, while negative values correspond to the addition of electrons.
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