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Register a new userDark channels in resonant tunneling transport through artificial atoms
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We investigate sequential tunneling through a multilevel quantum dot confining multiple electrons, in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime.
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Gas permeation through nanoscale pores is ubiquitous in nature and plays an important role in a plethora of technologies. Because the pore size is typically smaller than the mean free path of gas molecules, their flow is conventionally described by the Knudsen theory that assumes diffuse reflection (random-angle scattering) at confining walls. This assumption has proven to hold surprisingly well in experiment, and only a few cases of partially specular (mirror-like) reflection are known. Here we report gas transport through angstrom-scale channels with atomically-flat walls and show that surface scattering can be both diffuse or specular, depending on fine details of the surface atomic landscape, and quantum effects contribute to the specularity at room temperature. The channels made from graphene or boron nitride allow a helium gas flow that is orders of magnitude faster than expected from the theory. This is explained by specular surface scattering, which leads to ballistic transport and frictionless gas flow. Similar channels but with molybdenum disulfide walls exhibit much slower permeation that remains well described by Knudsen diffusion. The difference is attributed to stronger atomic corrugations at MoS2 surfaces, which are similar in height to the size of transported atoms and their de Broglie wavelength. The importance of the latter, matter-wave contribution is corroborated by the observation of a reversed isotope effect in which the mass flow of hydrogen is notably higher than that of deuterium, in contrast to the relation expected for classical flows. Our results provide insights into atomistic details of molecular permeation, which so far could be accessed only in simulations, and show a possibility of studying gas transport under a controlled confinement comparable to the quantum-mechanical size of atoms.
We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth.
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneling, which appears due to intersection of electron and hole branches of energy spectrum, are described. Dependencies of tunneling current on concentrations in top and bottom graphene layers, which are governed by the voltages applied through independent contacts and gates, are considered for the back- and double-gated structures. The current-voltage characteristics of the back-gated structure are in agreement with the recent experiment [Science 335, 947 (2012)]. For the double-gated structures, the resonant dissipative tunneling causes a ten times enhancement of response which is important for transistor applications.
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin-orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to probe the conservation of spin-valley degree of freedom in tunneling. In heterostructures where the two WSe2 monolayers have a 180{deg} relative twist, such that the Brillouin zone of one layer is aligned with the time-reversed Brillouin zone of the opposite layer, the resonant tunneling between the layers is suppressed. These findings provide evidence that in addition to momentum, the spin-valley degree of freedom is also conserved in vertical transport.
We provide a simple set of rules for predicting interference effects in off-resonant transport through single-molecule junctions. These effects fall in two classes, showing respectively an odd or an even number of nodes in the linear conductance within a given molecular charge state, and we demonstrate how to decide the interference class directly from the contacting geometry. For neutral alternant hydrocarbons, we employ the Coulson-Rushbrooke-McLachlan pairing theorem to show that the interference class is decided simply by tunneling on and off the molecule from same, or different sublattices. More generally, we investigate a range of smaller molecules by means of exact diag- onalization combined with a perturbative treatment of the molecule-lead tunnel coupling. While these results generally agree well with GW calculations, they are shown to be at odds with simpler mean-field treatments. For molecules with spin-degenerate ground states, we show that for most junctions, interference causes no transmission nodes, but argue that it may lead to a non-standard gate-dependence of the zero-bias Kondo resonance.
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