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Register a new userResonant Rayleigh scattering from quantum phases of cold electrons in semiconductor heterostructures
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Resonant Rayleigh scattering of light from electrons confined in gallium arsenide double quantum wells displays significant changes at temperatures that are below one degree Kelvin. The Rayleigh resonance occurs for photon energies that overlap a quantum well exciton and when electron bilayers condense into a quantum-Hall state. Marked changes in Rayleigh scattering intensities that occur in response to application of an in-plane magnetic field indicate that the unexpected temperature dependence is linked to formation of non-uniform electron fluids in a disordered quantum-Hall phase. These results demonstrate a new realm of study in which resonant Rayleigh scattering methods probe quantum phases of cold electrons in semiconductor heterostructures.
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We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder.
We address the problem of transmission of electrons between two noninteracting leads through a region where they interact (quantum dot). We use a model of spinless electrons hopping on a one-dimensional lattice and with an interaction on a single bond. We show that all the two-particle scattering states can be found exactly. Comparisons are made with numerical results on the time evolution of a two-particle wave packet and several interesting features are found for scattering. For N particles the scattering state is obtained by perturbation theory. For a dot connected to Fermi seas at different chemical potentials, we find an expression for the change in the Landauer current resulting from the interactions on the dot. We end with some comments on the case of spin-1/2 electrons.
When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two dimensional systems were predicted to spontaneously break continuous translation symmetry and form a quantum crystal. Efforts to observe this elusive state of matter, termed a Wigner crystal (WC), in two dimensional extended systems have primarily focused on electrons confined to a single Landau level at high magnetic fields, but have not provided a conclusive experimental signature of the emerging charge order. Here, we use optical spectroscopy to demonstrate that electrons in a pristine monolayer semiconductor with density $ lesssim 3 cdot 10^{11}$ cm$^{-2}$ form a WC. The interactions between resonantly injected excitons and electrons arranged in a periodic lattice modify the exciton band structure so that it exhibits a new umklapp resonance, heralding the presence of charge order. Remarkably, the combination of a relatively high electron mass and reduced dielectric screening allows us to observe an electronic WC state even in the absence of magnetic field. The tentative phase diagram obtained from our Hartree-Fock calculations provides an explanation of the striking experimental signatures obtained up to $B = 16$ T. Our findings demonstrate that charge-tunable transition metal dichalcogenide (TMD) monolayers enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy, even in the absence of a moire potential or external fields.
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
A fractal-like alignment of quantum wells is shown to accommodate resonant states with long lifetimes. For the parameters of the semiconductor heterostructure GaAs/Al$_{0.4}$Ga$_{0.6}$As with the well depth 300meV, a resonant state of the energy as high as 44meV with the lifetime as long as 2.8{mu}s is shown to be achievable.
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