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Register a new userValence-Band UPS, 6$p$ Core-Level XPS Photoemission Spectroscopy, and Low-Energy Electron Diffraction of a Uranium (001) Single Crystal
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Valence-band ultraviolet photoemission spectroscopy (UPS) at 173K and 6p core-level X-ray photoemission spectroscopy (XPS) at room temperature were performed on a high quality uranium single crystal. Significant agreement is found with first-principles electronic band-structure calculations, using a generalized gradient approximation (GGA). In addition, using Low Energy Electron Diffraction (LEED) for the (001) surface, we find a well-ordered orthorhombic crystallographic structure representative of the bulk material.
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We have re-examined the valence-band (VB) and core-level electronic structure of NiO by means of hard and soft x-ray photoemission spectroscopy (PES). The spectral weight of the lowest energy state found to be enhanced in the bulk sensitive Ni 2p core-level PES. A configuration-interaction model including the bound state screening has shown significant agreement with the core-level spectra, and the off and on-resonance VB spectra. These results identify the lowest energy state in core-level and VB-PES as the Zhang-Rice doublet bound state, consistent with the spin-fermion model and recent ab initio calculation with dynamical mean-field theory (LDA + DMFT).
An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.
We have investigated the electronic structure of LaFeAsO$_{1-x}$F$_{x}$ (x = 0; 0.1; 0.2) by angle-integrated photoemission spectroscopy and local density approximation (LDA) based band structure calculations. The valence band consists of a low energy peak at E = -0.25 eV and a broad structure around E = -5 eV in qualitative agreement with LDA. From the photon energy dependence of these peaks we conclude that the former derives almost exclusively from Fe 3d states. This constitutes experimental evidence for the strong iron character of the relevant states in a broad window around EF and confirms theoretical predictions.
In the light of recent measurements of the C 1s core level dispersion in graphene [Nat. Phys. 6, 345 (2010)], we explore the interplay between the elastic scattering of photoelectrons and the surface core level shifts with regard to the determination of core level binding energies in Au(111) and Cu3Au(100). We find that an artificial shift is created in the binding energies of the Au 4f core levels, that exhibits a dependence on the emission angle, as well as on the spectral intensity of the core level emission itself. Using a simple model, we are able to reproduce the angular dependence of the shift and relate it to the anisotropy in the electron emission from the bulk layers. Our results demonstrate that interpretation of variation of the binding energy of core-levels should be conducted with great care and must take into account the possible influence of artificial shifts induced by elastic scattering.
Continuing the photoemission study begun with the work of Opeil et al. [Phys. Rev. B textbf{73}, 165109 (2006)], in this paper we report results of an angle-resolved photoemission spectroscopy (ARPES) study performed on a high-quality single-crystal $alpha$-uranium at 173 K. The absence of surface-reconstruction effects is verified using X-ray Laue and low-energy electron diffraction (LEED) patterns. We compare the ARPES intensity map with first-principles band structure calculations using a generalized gradient approximation (GGA) and we find good correlations with the calculated dispersion of the electronic bands.
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