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Register a new userDynamical T-matrix theory for high-density excitons in coupled quantum wells
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R. Zimmermann
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Excitons in coupled quantum wells open the possibility to reach high densities close to equilibrium. In a recent experiment employing a lateral trap potential, a blue shift and a broadening of the exciton emission line has been seen (Snoke, SSC 134). The standard Hartree-Fock treatment can explain the blue shift but fails to give a finite broadening. Starting from the (spin-dependent) many-exciton Hamiltonian with direct and exchange potential, we present a dynamical T-matrix calculation for the single-exciton Greens function which is directly related to the frequency- and angle-resolved photoluminescence. The calculated spectrum is blue shifted and broadened due to exciton-exciton scattering. At high excitation, both the spectrum and the angular emission are getting narrow. This is a direct manifestation for off-diagonal long range order and a precursor of condensation.
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An accurate calculation of the exciton ground and excited states in AlGaAs and InGaAs coupled quantum wells (CQWs) in an external electric field is presented. An efficient and straightforward algorithm of solving the Schrodinger equation in real space has been developed and exciton binding energies, oscillator strengths, lifetimes, and absorption spectra are calculated for applied electric fields up to 100 kV/cm. It is found that in symmetric 8-4-8 nm GaAs/Al(0.33)Ga(0.67)As CQW structure, the ground state of the system switches from direct to indirect exciton at approximately 5 kV/cm with dramatic changes of its binding energy and oscillator strength while the bright excited direct-exciton state remains almost unaffected. It is shown that the excitonic lifetime is dominated either by the radiative recombination or by tunneling processes at small/large values of the electric field, respectively. The calculated lifetime of the exciton ground state as a function of the bias voltage is in a quantitative agreement with low-temperature photoluminescence measurements. We have also made freely available a numerical code for calculation of the optical properties of direct and indirect excitons in CQWs in an electric field.
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temperature, while the linewidths demonstrate a complex and peculiar behavior. At low pumping the widths of all peaks remain quite narrow ($< 0.1$ meV) in the whole temperature range studied, $4 - 30K$. At the stronger pumping, the linewidth first increases and than drops down with the temperature rise. Pump-probe experiments show two characteristic time scales in the exciton decay, $< 10$ps and $15 - 45ns$, respectively. We interpret all these data by an interplay between the exciton recombination within the light cone, the exciton relaxation from a non-radiative reservoir to the light cone, and the thermal dissociation of the non-radiative excitons. The broadening of the low energy exciton lines is governed by the radiative recombination and scattering with reservoir excitons while for the higher energy states the linewidths are also dependent on the acoustic phonon relaxation processes.
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.
Dynamical screening function of the two-dimensional electron gas in wide HgTe quantum well (QW) has been numerically modelled in this work. Calculations were provided in the Random Phase Approximation (RPA) framework and were based on Lindhard equation. Our simulations directly incorporated non-parabolicity of bulk 2D carriers spectrum, which was obtained by full 8-band k.p method. In the literature exists data that transport properties of HgTe QWs are explained by graphene-like screening. We provide the comparison of the screening function for the Schrodinger fermions in the inverted bands HgTe QW with the appropriate screening function for graphene monolayer with the Dirac fermions. In addition, the dependencies of HgTe-specific screening function on temperature, scattering wave-vector and frequency are studied with the purpose to study the transport properties under high-frequency radiation the QWs structures to be used as THz detectors. Plasmon frequencies of 2DEG in HgTe quantum well under study were calculated in the long-wavelength limit for T=77K.
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominally square QWs as well as with triangle-like QWs. Several quantum confined exciton states are experimentally observed as narrow exciton resonances with various profiles. A standard approach for the phenomenological analysis of the profiles is generalized by introducing of different phase shifts for the light waves reflected from the QWs at different exciton resonances. Perfect agreement of the phenomenological fit to the experimentally observed exciton spectra for high-quality structures allowed us to obtain reliable parameters of the exciton resonances including the exciton transition energies, the radiative broadenings, and the phase shifts. A direct numerical solution of Schr{o}dinger equation for the heavy-hole excitons in asymmetric QWs is used for microscopic modeling of the exciton resonances. Remarkable agreement with the experiment is achieved when the effect of indium segregation during the heterostructure growth is taken into account. The segregation results in a modification of the potential profile, in particular, in an asymmetry of the nominally square QWs.
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