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Register a new userStability Diagram of a Few-Electron Triple Dot
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Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a cloning of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models.
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In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant conditions such as quadruple points where all three quantum dots are on resonance. We find that in such a device resonant conditions at specific configurations are accompanied by novel charge transfer behaviour.
The Fano factor stability diagram of a C$_{3v}$ symmetric triangular quantum dot is analysed for increasing electron fillings $N$. At low filling, conventional Poissonian and sub-Poissonian behavior is found. At larger filling, $Nge 2$, a breaking of the electron-hole symmetry is manifested in super-Poissonian noise with a peculiar bias voltage dependence of the Fano factor at Coulomb and interference blockade. An analysis of the Fano map unravels a nontrivial electron bunching mechanism arising from the presence of degenerate many-body states combined with orbital interference and Coulomb interactions. An expression for the associated dark states is provided for generic $N$.
A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experiments have been performed on this device. In this short paper we present data and confirm that transport is coherent by observing a Pi phase shift in magneto-conductance oscillations as one passes through the quadruple point.
We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model.
We present the full three dimensionality of an electrostatically calculated stability diagram for triple quantum dots. The stability diagram maps out the favored charge configuration of the system as a function of potential shifts due to gate voltages. For triple dots only a three dimensional visualization allows for the complete identification of all its components. Those are most notably the so called quadruple points where four electronic configurations are degenerate, and quantum cellular automata (QCA) processes. The exact positions of these features within the stability diagram are now revealed. Furthermore the influence on transport is studied by comparing the model with a two path triple quantum dot made with local anodic oxidation. The two path setup allows to study the influence of the dots arrangement.
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