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Register a new userMagnetic field processing to enhance critical current densities of MgB2 superconductors
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Magnetic field of up to 12 T was applied during the sintering process of pure MgB2 and carbon nanotube (CNT) doped MgB2 wires. We have demonstrated that magnetic field processing results in grain refinement, homogeneity and significant enhancement in Jc(H) and Hirr. The Jc of pure MgB2 wire increased by up to a factor of 3 to 4 and CNT doped MgB2 by up to an order of magnitude in high field region respectively, compared to that of the non-field processed samples. Hirr for CNT doped sample reached 7.7 T at 20 K. Magnetic field processing reduces the resistivity in CNT doped MgB2, straightens the entangled CNT and improves the adherence between CNTs and MgB2 matrix. No crystalline alignment of MgB2 was observed. This method can be easily scalable for a continuous production and represents a new milestone in the development of MgB2 superconductors and related systems.
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MgB2/Fe tapes with 2.5-15 at.% ZrB2 additions were prepared through the in situ powder-in-tube method. Compared to the pure tape, a significant improvement in the in-field critical current density Jc was observed, most notably for 10 at.% doping, while the critical temperature decreased slightly. At 4.2 K, the transport Jc for the 10 at.% doped sample increased by more than an order of magnitude than the undoped one in magnetic fields above 9 T. Nanoscale segregates or defects caused by the ZrB2 additions which act as effective flux pinning centers are proposed to be the main reason for the improved Jc field performance.
For any practical superconductor the magnitude of the critical current density, $J_textrm{c}$, is crucially important. It sets the upper limit for current in the conductor. Usually $J_textrm{c}$ falls rapidly with increasing external magnetic field but even in zero external field the current flowing in the conductor generates a self-field which limits $J_textrm{c}$. Here we show for thin films of thickness less than the London penetration depth, $lambda$, this limiting $J_textrm{c}$ adopts a universal value for all superconductors - metals, oxides, cuprates, pnictides, borocarbides and heavy Fermions. For type I superconductors, it is $H_{textrm{c}}/lambda$ where $H_textrm{c}$ is the thermodynamic critical field. But surprisingly for type II superconductors we find the self-field $J_textrm{c}$ is $H_{textrm{c}1}/lambda$ where $H_{textrm{c}1}$ is the lower critical field. $J_textrm{c}$ is thus fundamentally determined and this provides a simple means to extract absolute values of $lambda(T)$ and, from its temperature dependence, the symmetry and magnitude of the superconducting gap.
The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the reduced effective area argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.
A relatively high critical temperature, Tc, approaching 40 K, places the recently-discovered superconductor magnesium diboride (MgB2) intermediate between the families of low- and copper-oxide-based high-temperature superconductors (HTS). Supercurrent flow in MgB2 is unhindered by grain boundaries, unlike the HTS materials. Thus, long polycrystalline MgB2 conductors may be easier to fabricate, and so could fill a potentially important niche of applications in the 20 to 30 K temperature range. However, one disadvantage of MgB2 is that in bulk material the critical current density, Jc, appears to drop more rapidly with increasing magnetic field than it does in the HTS phases. The magnitude and field dependence of Jc are related to the presence of structural defects that can pin the quantised magnetic vortices that permeate the material, and prevent them from moving under the action of the Lorentz force. Vortex studies suggest that it is the paucity of suitable defects in MgB2 that causes the rapid decay of Jc with field. Here we show that modest levels of atomic disorder, induced by proton irradiation, enhance the pinning, and so increase Jc significantly at high fields. We anticipate that chemical doping or mechanical processing should be capable of generating similar levels of disorder, and so achieve technologically-attractive performance in MgB2 by economically-viable routes.
We have studied the upper critical field, Bc2, in poly-crystalline MgB2 samples in which disorder was varied in a controlled way to carry selectively p and s bands from clean to dirty limit. We have found that the clean regime survives when p bands are dirty and s bands are midway between clean and dirty. In this framework we can explain the anomalous behaviour of Al doped samples, in which Bc2 decreases as doping increases.
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