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Register a new userTheory of phonon-induced spin relaxation in laterally coupled quantum dots
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Phonon-induced spin relaxation in coupled lateral quantum dots in the presence of spin-orbit coupling is calculated. The calculation for single dots is consistent with experiment. Spin relaxation in double dots at useful interdot couplings is dominated by spin hot spots that are strongly anisotropic. Spin hot spots are ineffective for a diagonal crystallographic orientation of the dots with a transverse in-plane field. This geometry is proposed for spin-based quantum information processing.
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We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the inter-electron repulsion, and Rashba and Dresselhaus spin-orbit couplings are exactly diagonalized. We show that electron-electron interaction strongly affects spin-orbit admixture in the sample. Consequently, relaxation rates strongly depend on the number of carriers confined in the dot. We identify the mechanisms which may lead to improved spin stability in few electron (>2) quantum dots as compared to the usual one and two electron devices. Finally, we discuss recent experiments on triplet-singlet transitions in GaAs dots subject to external magnetic fields. Our simulations are in good agreement with the experimental findings, and support the interpretation of the observed spin relaxation as being due to spin-orbit coupling assisted by acoustic phonon emission.
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.
We have studied the absorption of electromagnetic radiation of an anisotropic quantum dot taking into account the spin-flip processes that is associated with the interaction of the electrons with optical phonons. It is shown that these processes lead to the resonance absorption. Explicit formula is derived for the absorption coefficient. The positions of the resonances peaks are found.
The electronic states of lateral many electron quantum dots in high magnetic fields are analyzed in terms of energy and spin. In a regime with two Landau levels in the dot, several Coulomb blockade peaks are measured. A zig-zag pattern is found as it is known from the Fock-Darwin spectrum. However, only data from Landau level 0 show the typical spin-induced bimodality, whereas features from Landau level 1 cannot be explained with the Fock-Darwin picture. Instead, by including the interaction effects within spin-density-functional theory a good agreement between experiment and theory is obtained. The absence of bimodality on Landau level 1 is found to be due to strong spin polarization.
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