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Register a new userThe stability of strained H:Si(105) and H:Ge(105) surfaces
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We report atomic scale studies of the effect of applied strain and hydrogen environment on the reconstructions of the (105) Si and Ge surfaces. Surface energy calculations for monohydride-terminated (001) and (105) reconstructions reveal that the recently established single-height rebonded model is unstable not only with respect to (001), but also in comparison to other monohydride (105) structures. This finding persists for both Si and Ge, for applied biaxial strains from -4% to 4%, and for nearly the entire relevant domain of the chemical potential of hydrogen, thus providing an explanation for the recently observed H-induced destabilization of the Ge(105) surface.
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We propose a scenario for a periodic filling and emptying of the accretion disc of GRS 1915+105, by computing the mass transfer rate from the donor and comparing it with the observed accretion rate. The binary parameters found by Greiner et al. (2001) predict evolutionary expansion of the donor along the giant branch with a conservative mass transfer rate (1 - 2)E-8 solar masses per year. This reservoir can support the present accretion with a duty cycle 0.05 - 0.1 (the active time as a fraction of the total life time). The viscosity time scale at the circularization radius (15 solar radii from the primary 14 solar mass black hole) is identified as the recurrent quiescent time during which a new disc is formed once consumed by the BH. For small viscosity (alpha = 0.001) it equals to 300 - 400 years. The microquasar phase, with the duty cycle, will last around 10 million years ending with a long period black hole + white dwarf system.
An extensive theoretical investigation of the nonpolar (10$bar{1}$0) and (11$bar{2}$0) surfaces as well as the polar zinc terminated (0001)--Zn and oxygen terminated (000$bar{1}$)--O surfaces of ZnO is presented. Particular attention is given to the convergence properties of various parameters such as basis set, k--point mesh, slab thickness, or relaxation constraints within LDA and PBE pseudopotential calculations using both plane wave and mixed basis sets. The pros and cons of different approaches to deal with the stability problem of the polar surfaces are discussed. Reliable results for the structural relaxations and the energetics of these surfaces are presented and compared to previous theoretical and experimental data, which are also concisely reviewed and commented.
A complete knowledge of absolute surface energies with any arbitrary crystal orientation is important for the improvements of semiconductor devices because it determines the equilibrium and nonequilibrium crystal shapes of thin films and nanostructures. It is also crucial in the control of thin film crystal growth and surface effect studies in broad research fields. However, obtaining accurate absolute formation energies is still a huge challenge for the semi-polar surfaces of compound semiconductors. It mainly results from the asymmetry nature of crystal structures and the complicated step morphologies and related reconstructions of these surface configurations. Here we propose a general approach to calculate the absolute formation energies of wurtzite semi-polar surfaces by first-principles calculations, taking GaN as an example. We mainly focused on two commonly seen sets of semi-polar surfaces: a-family (11-2X) and m-family (10-1X). For all the semi-polar surfaces that we have calculated in this paper, the self-consistent accuracy is within 1.5 meV/{AA}^2. Our work fills the last technical gap to fully investigate and understand the shape and morphology of compound semiconductors.
We present multiepoch VLBA observations of the compact jet of GRS 1915+105 conducted at 15.0 and 8.4 GHz during a {it plateau} state of the source in 2003 March-April. These observations show that the compact jet is clearly asymmetric. Assuming an intrinsically symmetric continuous jet flow, using Doppler boosting arguments and an angle to the line of sight of $theta=70degr$, we obtain values for the velocity of the flow in the range 0.3--0.5$c$. These values are much higher than in previous observations of such compact jet, although much lower than the highly relativistic values found during individual ejection events. These preliminary results are compatible with current ideas on the jet flow velocity for black holes in the low/hard state.
Owing to their shallow stellar potential, dwarf galaxies possess thick gas disks, which makes them good candidates for studies of the galactic vertical kinematical structure. We present 21 cm line observations of the isolated nearby dwarf irregular galaxy UGCA 105, taken with the Westerbork Synthesis Radio Telescope (WSRT), and analyse the geometry of its neutral hydrogen (HI) disk and its kinematics. The galaxy shows a fragmented HI distribution. It is more extended than the optical disk, and hence allows one to determine its kinematics out to very large galacto-centric distances. The HI kinematics and morphology are well-ordered and symmetric for an irregular galaxy. The HI is sufficiently extended to observe a substantial amount of differential rotation. Moreover, UGCA 105 shows strong signatures for the presence of a kinematically anomalous gas component. Performing tilted-ring modelling by use of the least-squares fitting routine TiRiFiC, we found that the HI disk of UGCA 105 has a moderately warped and diffuse outermost part. Probing a wide range of parameter combinations, we succeeded in modelling the data cube as a disk with a strong vertical gradient in rotation velocity ($approx -60,rm km,s^{-1},kpc^{-1}$), as well as vertically increasing inwards motion ($approx -70,rm km,s^{-1},kpc^{-1}$) within the radius of the stellar disk. The inferred radial gas inflow amounts to $0.06,rm M_odot rm yr^{-1}$, which is similar to the star formation rate of the galaxy. The observed kinematics are hence compatible with direct or indirect accretion from the intergalactic medium, an extreme backflow of material that has formerly been expelled from the disk, or a combination of both.
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