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Register a new userMajority-Carrier Mobilities in Undoped and textit{n}-type Doped ZnO Epitaxial Layers
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Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental `mobility vs concentration curve, unusual phenomenon was observed, i.e., mobilities at $n_s sim 5times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.
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