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Register a new user1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs
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Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hopping transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced.
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We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films.
We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise scales with the resistance, $S_R/R^2 sim R^{2.4}$, as for a second order phase transition such as a percolation transition. The p_s dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p* which is lower than the observed MIT critical density p_c.
The temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K$ < T < 1.5$ K. At higher temperatures, 1.5 K$<T<4$ K, it is due to the interaction quantum correction. Finally, at $T>4-6$ K, the metallic-like behavior is determined by the phonon scattering.
We present a numerical study of the spin Hall effect in a two-dimensional hole gas (2DHG) system in the presence of disorder. We find that the spin Hall conductance (SHC), extrapolated to the thermodynamic limit, remains finite in a wide range of disorder strengths for a closed system on torus. But there is no intrinsic spin Hall accumulation as induced by an external electric field once the disorder is turned on. The latter is examined by performing a Laughlins Gedanken gauge experiment numerically with the adiabatical insertion of a flux quantum in a belt-shaped sample, in which the absence of level crossing is found under the disorder effect. Without disorder, on the other hand, energy levels do cross each other, which results in an oscillating spin-density-modulation at the sample boundary after the insertion of one flux quantum in the belt-shaped system. But the corresponding net spin transfer is only about one order of magnitude smaller than what is expected from the bulk SHC. These apparently contradictory results can be attributed to the violation of the spin conservation law in such a system. We also briefly address the dissipative Fermi surface contribution to spin polarization, which may be relevant to experimental measurements.
We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BTtau/hbar>1. The MR grows with field and exhibits a maximum at fields B>1/mu, where mu is the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field, and found qualitative similarities and discrepancies.
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