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Register a new userNegative differential conductance in quantum dots in theory and experiment
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Experimental results for sequential transport through a lateral quantum dot in the regime of spin blockade induced by spin dependent tunneling are compared with theoretical results obtained by solving a master equation for independent electrons. Orbital and spin effects in electron tunneling in the presence of a perpendicular magnetic field are identified and discussed in terms of the Fock-Darwin spectrum with spin. In the nonlinear regime, a regular pattern of negative differential conductances is observed. Electrical asymmetries in tunnel rates and capacitances must be introduced in order to account for the experimental findings. Fast relaxation of the excited states in the quantum dot have to be assumed, in order to explain the absence of certain structures in the transport spectra.
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Transport through a single molecular conductor is considered, showing negative differential conductance behavior associated with phonon-mediated electron tunneling processes. This theoretical work is motivated by a recent experiment by Leroy et al. using a carbon nanotube contacted by an STM tip [Nature {bf 432}, 371 (2004)], where negative differential conductance of the breathing mode phonon side peaks could be observed. A peculiarity of this system is that the tunneling couplings which inject electrons and those which collect them on the substrate are highly asymmetrical. A quantum dot model is used, coupling a single electronic level to a local phonon, forming polaron levels. A half-shuttle mechanism is also introduced. A quantum kinetic formulation allows to derive rate equations. Assuming asymmetric tunneling rates, and in the absence of the half-shuttle coupling, negative differential conductance is obtained for a wide range of parameters. A detailed explanation of this phenomenon is provided, showing that NDC is maximal for intermediate electron-phonon coupling. In addition, in absence of a gate, the floating level results in two distinct lengths for the current plateaus, related to the capacitive couplings at the two junctions. It is shown that the half-shuttle mechanism tends to reinforce the negative differential regions, but it cannot trigger this behavior on its own.
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphenes unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.
Experimental results showing huge negative differential conductance in gold-hydrogen molecular nanojunctions are presented. The results are analyzed in terms of two-level system (TLS) models: it is shown that a simple TLS model cannot produce peaklike structures in the differential conductance curves, whereas an asymmetrically coupled TLS model gives perfect fit to the data. Our analysis implies that the excitation of a bound molecule to a large number of energetically similar loosely bound states is responsible for the peaklike structures. Recent experimental studies showing related features are discussed within the framework of our model.
Electron tunneling through a two stage Kondo system constituted by a double quantum-dot molecule side coupled to a quantum wire, under the effect of a finite external potential is studied. We found that $I$-$V$ characteristic shows a negative differential conductance region induced by the electronic correlation. This phenomenon is a consequence of the properties of the two stage Kondo regime under the effect of an external applied potential that takes the system out of equilibrium. The problem is solved using the mean-field finite-$U$ slave-boson formalism.
We investigate the thermal transport properties of a temperature-biased Josephson tunnel junction composed of two different superconductors. We show that this simple system can provide a large negative differential thermal conductance (NDTC) with a peak-to-valley ratio of $sim 3$ in the transmitted electronic heat current. The NDTC is then exploited to outline the caloritronic analogue of the tunnel diode, which can exhibit a modulation of the output temperature as large as 80 mK at a bath temperature of 50 mK. Moreover, this device may work in a regime of thermal hysteresis that can be used to store information as a thermal memory. On the other hand, the NDTC effect offers the opportunity to conceive two different designs of a thermal transistor, which might operate as a thermal switch or as an amplifier/modulator. The latter shows a heat amplification factor $>1$ in a 500-mK-wide working region of the gate temperature. After the successful realization of heat interferometers and thermal diodes, this kind of structures would complete the conversion of the most important electronic devices in their thermal counterparts, breaking ground for coherent caloritronics nanocircuits where heat currents can be manipulated at will.
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