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We consider the design of two-dimensional electrostatic traps for dipolar indirect excitons. We show that the excitons dipole-dipole interaction, combined with the in-plane electric fields that arise due to the trap geometry, constrain the maximal density and lifetime of trapped excitons. We derive an analytic estimate of these values and determine their dependence on the trap geometry, thus suggesting the optimal design for high density trapping as a route for observing excitonic Bose-Einstein condensation.
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We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps.
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.
We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.
We report a two-dimensional artificial lattice for dipolar excitons confined in a GaAs double quantum well. Exploring the regime of large fillings per lattice site, we verify that the lattice depth competes with the magnitude of excitons repulsive dipolar interactions to control the degree of localisation in the lattice potential. Moreover, we show that dipolar excitons radiate a narrow-band photoluminescence, with a spectral width of a few hundreds of micro-eV at 340 mK, in both localised and delocalised regimes. This makes our device suitable for explorations of dipolar excitons quasi-condensation in a periodic potential.
Emergence of algebraic quasi-long-range order is a key feature of superfluid phase transitions at two dimensions. For this reduced dimensionality interactions prevent Bose-Einstein condensation with true long range order, at any finite temperature. Here, we report the occurence of algebraic order in a strongly interacting quantum liquid formed by dipolar excitons confined in a bilayer semiconductor heterostructure. We observe a transition from exponential to algebraic decay of the excitons temporal coherence, accompanied by a universal scaling behaviour of the equation of state. Our results provide strong evidence for a Berezinskii-Kosterlitz-Thouless (BKT) transition in a multi-component boson-like system governed by strong dipolar interactions.
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