Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCharge Sensing of an Artificial H2+ Molecule
160
0
0.0
(
0
)
Added by
Michel Pioro-Ladri\\`ere
Publication date
2005
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and the sensor is taken into account explicitly. From the measurements, we extract the temperature of the isolated electron and the tunnel coupling energy. It is found that this coupling can be tuned between 0 and 60 micro electron-volt in our device.
rate research
Read More
We optically probe and electrically control a single artificial molecule containing a well defined number of electrons. Charge and spin dependent inter-dot quantum couplings are probed optically by adding a single electron-hole pair and detecting the emission from negatively charged exciton states. Coulomb and Pauli blockade effects are directly observed and hybridization and electrostatic charging energies are independently measured. The inter-dot quantum coupling is confirmed to be mediated predominantly by electron tunneling. Our results are in excellent accord with calculations that provide a complete picture of negative excitons and few electron states in quantum dot molecules.
Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states of the two-level molecule. We find in addition that the magnetic field induces variations in the tunnel coupling between the two atoms. The lateral nature of the device is evoked to explain this behavior.
We report high-bandwidth charge sensing measurements using a GaAs quantum point contact embedded in a radio frequency impedance matching circuit (rf-QPC). With the rf-QPC biased near pinch-off where it is most sensitive to charge, we demonstrate a conductance sensitivity of 5x10^(-6) e^(2)/h Hz^(-1/2) with a bandwidth of 8 MHz. Single-shot readout of a proximal few-electron double quantum dot is investigated in a mode where the rf-QPC back-action is rapidly switched.
An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quantum dot has a robust shell structure and, when operated at an occupancy of 5 or 13 electrons, has single spin-$frac{1}{2}$ valence electron in its $p$- or $d$-orbital, respectively. These higher electron occupancies screen atomic-level disorder. The larger multielectron wavefunctions also enable significant overlap between neighbouring qubit electrons, while making space for an interstitial exchange-gate electrode. We implement a universal gate set using the magnetic field gradient of a micromagnet for electrically-driven single qubit gates, and a gate-voltage-controlled inter-dot barrier to perform two-qubit gates by pulsed exchange coupling. We use this gate set to demonstrate a Bell state preparation between multielectron qubits with fidelity 90.3%, confirmed by two-qubit state tomography using spin parity measurements.
We present results on spin and charge correlations in two-dimensional quantum dots as a function of increasing Coulomb strength (dielectric constant). We look specifically at the orbital occupation of both spin and charge. We find that charge and spin evolve separately, especially at low Coulomb strength. For the charge, we find that a hole develops in the core orbitals at strong Coulomb repulsion, invalidating the common segregation of confined electrons into an inert core and active valence electrons. For excitations, we find a total spin-projection $S_z = -1/2$ breaks apart into separate occupations of positive and negative spin. This dissociation is caused by spin correlations alone. Quantum fluctuations arising from long-range Coulomb repulsion destroy the spin dissociation and eventually results in all orbitals carrying a negative spin.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
