We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe spacer layer appears to be the most plausible mechanism to induce the antiferromagnetic coupling.
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