Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDevelopment of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition
102
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T.
rate research
Read More
Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted by the elastic scattering on impurities in the barrier layer. These peaks are shown to shift to the higher voltage due to the Coulomb pseudogap in the intermediate fields. In the high magnetic fields the pseudogap shift is disappeared.
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite band gap in graphene bilayers, which naturally are zero-gap semiconductors. So far, however, the same principle could not be employed to control a broader class of materials, because the required electric fields are beyond reach in current devices. To overcome this limitation, we have realized double ionic gated transistors that enable the application of very large electric fields. Using these devices, we show that the band gap of few-layer semiconducting transition metal dichalcogenides can be continuously suppressed from 1.5 eV to zero. Our results illustrate an unprecedented level of control of the band structures of 2D semiconductors, which is important for future research and applications.
We report inelastic light scattering measurements of dispersive spin and charge density excitations in dilute 2D electron systems reaching densities less than 10^{10} cm^{-2}. In the quantum Hall state at nu=2, roton critical points in the spin inter--Landau level mode show a pronounced softening as r_s is increased. Instead of a soft mode instability predicted by Hartree--Fock calculations for r_s ~ 3.3, we find evidence of multiple rotons in the dispersion of the softening spin excitations. Extrapolation of the data indicates the possibility of an instability for r_s >~ 11.
We calculate the spin-Hall conductivity for a two-dimensional electron gas within the self-consistent Born approximation, varying the strength and type of disorder. In the weak disorder limit we find both analytically and numerically a vanishing spin-Hall conductivity even when we allow a momentum dependent scattering. Separating the reactive from the disspative current response, we find the universal value $sigma^R_{sH} = e/8 pi$ for the reactive response, which cancels however with the dissipative part $sigma^D_{sH} = -e/8 pi$.
The lifetime of two dimensional electrons in GaAs quantum wells, placed in weak quantizing magnetic fields, is measured using a simple transport method in broad range of temperatures from 0.3 K to 20 K. The temperature variations of the electron lifetime are found to be in good agreement with conventional theory of electron-electron scattering in 2D systems.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
