No Arabic abstract
We show that in the multi-terminal ballistic devices with intrinsic spin-orbit interaction connected to normal metal contacts there are no equilibrium spin currents present at any given electron energy. Obviously, this statement holds also after the integration over all occupied states. Based on the proof of this fact, a number of scenarios involving nonequilibrium spin currents is identified and further analyzed. In particular, it is shown that an arbitrary two-terminal device cannot polarize transient current. The same is true for the output terminal of an N-terminal device when all N-1 inputs are connected in parallel.
We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact. At large in-plane fields, with the point contacts biased to transmit only a single spin (g < e^2/h), the voltage across the collector depends on the spin polarization of the current incident on it. Spin polarizations of greater than 80% are found for both emitter and collector at 300mK and 7T in-plane field.
We study theoretically some symmetry properties of spin currents and spin polarizations in multi-terminal mesoscopic spin-orbit coupled systems. Based on a scattering wave function approach, we show rigorously that in the equilibrium state no finite spin polarizations can exist in a multi-terminal mesoscopic spin-orbit coupled system (both in the leads and in the spin-orbit coupled region) and also no finite equilibrium terminal spin currents can exist. By use of a typical two-terminal mesoscopic spin-orbit coupled system as the example, we show explicitly that the nonequilibrium terminal spin currents in a multi-terminal mesoscopic spin-orbit coupled system are non-conservative in general. This non-conservation of terminal spin currents is not caused by the use of an improper definition of spin current but is intrinsic to spin-dependent transports in mesoscopic spin-orbit coupled systems. We also show that the nonequilibrium lateral edge spin accumulation induced by a longitudinal charge current in a thin strip of textit{finite} length of a two-dimensional electronic system with intrinsic spin-orbit coupling may be non-antisymmetric in general, which implies that some cautions may need to be taken when attributing the occurrence of nonequilibrium lateral edge spin accumulation induced by a longitudinal charge current in such a system to an intrinsic spin Hall effect.
The existence of spin-currents in absence of any driving external fields is commonly considered an exotic phenomenon appearing only in quantum materials, such as topological insulators. We demonstrate instead that equilibrium spin currents are a rather general property of materials with non negligible spin-orbit coupling (SOC). Equilibrium spin currents can be present at the surfaces of a slab. Yet, we also propose the existence of global equilibrium spin currents, which are net bulk spin-currents along specific crystallographic directions of materials. Equilibrium spin currents are allowed by symmetry in a very broad class of systems having gyrotropic point groups. The physics behind equilibrium spin currents is uncovered by making an analogy between electronic systems with SOC and non-Abelian gauge theories. The electron spin can be seen as the analogous of the color degree of freedom and equilibrium spin currents can then be identified with diamagnetic color currents appearing as the response to an effective non-Abelian magnetic field generated by SOC. Equilibrium spin currents are not associated with spin transport and accumulation, but they should nonetheless be carefully taken into account when computing transport spin currents. We provide quantitative estimates of equilibrium spin currents for several systems, specifically metallic surfaces presenting Rashba-like surface states, nitride semiconducting nanostructures and bulk materials, such as the prototypical gyrotropic medium tellurium. In doing so, we also point out the limitations of model approaches showing that first-principles calculations are needed to obtain reliable predictions. We therefore use Density Functional Theory computing the so-called bond currents, which represent a powerful tool to understand the relation between equilibrium currents, electronic structure and crystal point group.
Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor, several tunneling experiments reported characteristic Majorana signatures. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas, and renders the topological properties inaccessible. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy, and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system, and exclude for the first time the known alternative explanations that invoke disorder or a nonuniform chemical potential.
A variational approach is used in order to study the stationary states of Hall devices. Charge accumulation, electric potentials and electric currents are investigated on the basis of the Kirchhoff-Helmholtz principle of least heat dissipation. A simple expression for the state of minimum power dissipated -- that corresponds to zero transverse current and harmonic chemical potential -- is derived. It is shown that a longitudinal surface current proportional to the charge accumulation is flowing near the edges of the device. Charge accumulation and surface currents define a boundary layer over a distance of the order of the Debye-Fermi length.