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Register a new userHalf-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure
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First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width can be controlled by adjusting the Al concentration in the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers.
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We present a study of the electronic structure and magnetism of Co$_2$MnAl, CoMnVAl and their heterostructure. We employ a combination of density-functional theory and dynamical mean-field theory (DFT+DMFT). We find that Co$_2$MnAl is a half-metallic ferromagnet, whose electronic and magnetic properties are not drastically changed by strong electronic correlations, static or dynamic. Non-quasiparticle states are shown to appear in the minority spin gap without affecting the spin-polarization at the Fermi level predicted by standard DFT. We find that CoMnVAl is a semiconductor or a semi-metal, depending on the employed computational approach. We then focus on the electronic and magnetic properties of the Co$_2$MnAl/CoMnVAl heterostructure, predicted by previous first principle calculations as a possible candidate for spin-injecting devices. We find that two interfaces, Co-Co/V-Al and Co-Mn/Mn-Al, preserve the half-metallic character, with and without including electronic correlations. We also analyse the magnetic exchange interactions in the bulk and at the interfaces. At the Co-Mn/Mn-Al interface, competing magnetic interactions are likely to favor the formation of a non-collinear magnetic order, which is detrimental for the spin-polarization.
Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a (Ga,Fe)Sb / BiSb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we are able to detect spin injection from (Ga,Fe)Sb by utilizing the inverse spin Hall effect (ISHE) in the topological surface states of BiSb with a large inverse spin Hall angle of 2.5. Our study provides the first demonstration of spin injection as well as spin-to-charge conversion at room temperature in a FMS/TI heterostructure.
Cobaltates have rich spin-states and diverse properties. Using spin-state pictures and firstprinciples calculations, here we study the electronic structure and magnetism of the mixed-valent double perovskite YBaCo2O6. We find that YBaCo2O6 is in the formal intermediate-spin (IS) Co3+/low-spin (LS) Co4+ ground state. The hopping of eg electron from IS-Co3+ to LS-Co4+ via double exchange gives rise to a ferromagnetic half-metallicity, which well accounts for the recent experiments. The reduction of both magnetization and Curie temperature by oxygen vacancies is discussed, aided with Monte Carlo simulations. We also explore several other possible spin-states and their interesting electronic/magnetic properties. Moreover, we predict that a volume expansion more than 3% would tune YBaCo2O6 into the high-spin (HS) Co3+/LS Co4+ ferromagnetic state and simultaneously drive a metal-insulator transition. Therefore, spin-states are a useful parameter for tuning the material properties of cobaltates.
We report a first-principles electronic-structure calculation on C and BN hybrid zigzag nanoribbons. We find that half-metallicity can arise in the hybrid nanoribbons even though stand-alone C or BN nanoribbon possesses a finite band gap. This unexpected half-metallicity in the hybrid nanos-tructures stems from a competition between the charge and spin polarizations, as well as from the pi orbital hybridization between C and BN. Our results point out a possibility of making spintronic devices solely based on nanoribbons and a new way of designing metal-free half metals.
Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface properties of the polar semiconductor, such as GaN are dominated by interface phonons, thus the optical properties of the vertical heterostructure depend strongly on the interface exciton-phonon coupling. The origin and activation of different Raman modes in the heterostructure due to coupling between interfacial phonons and optically generated carriers in a monolayer MoS2-GaN (0001) heterostructure was observed. This coupling strongly influences the non-equilibrium absorption properties of MoS2 and the emission properties of both semiconductors. Density functional theory (DFT) calculations were performed to study the band alignment of the interface, which revealed a type-I heterostructure. The optical excitation with interband transition in MoS2 at K-point strongly modulates the C excitonic band in MoS2. The overlap of absorption and emission bands of GaN with the absorption bands of MoS2 induces the energy and charge transfer across the interface with an optical excitation at {Gamma}-point. A strong modulation of the excitonic absorption states is observed in MoS2 on GaN substrate with transient optical pump-probe spectroscopy. The interaction of carriers with phonons and defect states leads to the enhanced and blue shifted emission in MoS2 on GaN substrate. Our results demonstrate the relevance of interface coupling between phonons and carriers for the development of optical and electronic applications.
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