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We apply first-principles calculations to study the electronic structure of boron nitride nanocones with disclinations of different angles $theta=npi/3$. Nanocones with odd values of $n$ present antiphase boundaries that cause a reduction of the work function of the nanocones, relative to the bulk BN value, by as much as 2 eV. In contrast, nanocones with even values of $n$ do not have such defects and present work functions that are very similar to the BN bulk value. These results should have strong consequences for the field emission properties of boron nitride nanocones and nanotubes.
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Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) {delta}-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 {mu}m). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
Carbon nanoscrolls (CNSs) are structures formed by rolling up graphene layers into a papyruslike shape. CNNs have been experimentally produced by different groups. Boron nitride nanoscrolls (BNNSs) are similar structures using boron nitride instead of graphene layers. In this work we report molecular mechanics and molecular dynamics results for the structural and dynamical aspects of BNNS formation. Similarly to CNS, BNNS formation is dominated by two major energy contributions, the increase in the elastic energy and the energetic gain due to van der Waals interactions of the overlapping surface of the rolled layers. The armchair scrolls are the most stable configuration while zigzag scrolls are metastable structures which can be thermally converted to armchair. Chiral scrolls are unstable and tend to evolve to zigzag or armchair configurations depending on their initial geometries. The possible experimental routes to produce BNNSs are also addressed.
A theoretical study of the electronic properties of nanodisks and nanocones is presented within the framework of a tight-binding scheme. The electronic densities of states and absorption coefficients are calculated for such structures with different sizes and topologies. A discrete position approximation is used to describe the electronic states taking into account the effect of the overlap integral to first order. For small finite systems, both total and local densities of states depend sensitively on the number of atoms and characteristic geometry of the structures. Results for the local densities of charge reveal a finite charge distribution around some atoms at the apices and borders of the cone structures. For structures with more than 5000 atoms, the contribution to the total density of states near the Fermi level essentially comes from states localized at the edges. For other energies the average density of states exhibits similar features to the case of a graphene lattice. Results for the absorption spectra of nanocones show a peculiar dependence on the photon polarization in the infrared range for all investigated structures.
Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. For all these applications, the perturbation on the underlying electronically active layers is critical. For example, while hBN on Cu(111) has been shown to preserve the Cu(111) surface state 2D electron gas, it was previously unknown how this varies over the sample and how it is affected by local electronic corrugation. Here, we demonstrate that the Cu(111) surface state under wafer-scale hBN is robustly homogeneous in energy and spectral weight over nanometer length scales and over atomic terraces. We contrast this with a benchmark spectral feature associated with interaction between BN atoms and the Cu surface, which varies with the Moire pattern of the hBN/Cu(111) sample and is dependent on atomic registry. This work demonstrates that fragile 2D electron systems and interface states are largely unperturbed by local variations created by the hBN due to atomic-scale interactions with the substrate, thus providing a remarkably transparent window on low-energy electronic structure below the hBN monolayer.
Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations.
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