We show that the critical magnetic fields at which a few-electron quantum dot undergoes transitions between successive values of its angular momentum (M), for large M values follow a very simple power-law dependence on the effective inter-electron interaction strength. We obtain this power law analytically from a quasi-classical treatment and demonstrate its nearly-universal validity by comparison with the results of exact diagonalization.
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.
We study ground states and excited states in semiconductor quantum dots containing 1 to 12 electrons. For the first time, it is possible to identify the quantum numbers of the states in the excitation spectra and make a direct comparison to exact calculations. A magnetic field induces transitions between excited states and ground state. These transitions are discussed in terms of crossings between single-particle states, singlet-triplet transitions, spin polarization, and Hunds rule. Our impurity-free quantum dots allow for atomic physics experiments in magnetic field regimes not accessible for atoms.
We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate voltage. We find that the tunnelling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale (a few meV) is comparable to those in static QDs as expected.
We investigate with the aid of numerical renormalization group techniques the thermoelectric properties of a molecular quantum dot described by the negative-U Anderson model. We show that the charge Kondo effect provides a mechanism for enhanced thermoelectric power via a correlation induced asymmetry in the spectral function close to the Fermi level. We show that this effect results in a dramatic enhancement of the Kondo induced peak in the thermopower of negative-U systems with Seebeck coefficients exceeding 50$mu V/K$ over a wide range of gate voltages.
We present a new method for calculating ground state properties of quantum dots in high magnetic fields. It takes into account the equilibrium positions of electrons in a Wigner cluster to minimize the interaction energy in the high field limit. Assuming perfect spin alignment the many-body trial function is a single Slater determinant of overlapping oscillator functions from the lowest Landau level centered at and near the classical equilibrium positions. We obtain an analytic expression for the ground state energy and present numerical results for up to N=40.
E. Anisimovas
,A. Matulis
,M. B. Tavernier
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(2004)
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"Power-law dependence of the angular momentum transition fields in few-electron quantum dots"
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Egidijus Anisimovas
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