Surface diffusion has an impact on the lateral resolution of nanostructures in bottom-up atom nanofabrication. In this paper we study the effects of the gallium atoms self-assembled on silicon surfaces (100) patterned with trenches at different slopes. These particular substrate morphologies have been made to enable an effective deposition rate variation along the surface. In this way we experimentally mimic the effect of the atomic flux modulation created by standing wave during an atom nanofabrication experiment. Even if we observe self organization of gallium atoms on the surface, we conclude that the nano-islands are not affected by surface diffusion processes and the effective variation of the deposition rate per unit area is the dominant factor affecting the growth differences along the surface. This result demonstrates that the gallium atoms self-organization should not prevent the observation of a periodic nano-patterning created by atom nano-fabrication techniques.
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