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Register a new userTowards fabrication of ordered gallium nanostructures by laser manipulation of neutral atoms: study of self-assembling phenomena
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B. Fazio
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Surface diffusion has an impact on the lateral resolution of nanostructures in bottom-up atom nanofabrication. In this paper we study the effects of the gallium atoms self-assembled on silicon surfaces (100) patterned with trenches at different slopes. These particular substrate morphologies have been made to enable an effective deposition rate variation along the surface. In this way we experimentally mimic the effect of the atomic flux modulation created by standing wave during an atom nanofabrication experiment. Even if we observe self organization of gallium atoms on the surface, we conclude that the nano-islands are not affected by surface diffusion processes and the effective variation of the deposition rate per unit area is the dominant factor affecting the growth differences along the surface. This result demonstrates that the gallium atoms self-organization should not prevent the observation of a periodic nano-patterning created by atom nano-fabrication techniques.
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Hybrid nanophotonics based on metal-dielectric nanostructures unifies the advantages of plasmonics and all-dielectric nanophotonics providing strong localization of light, magnetic optical response and specifically designed scattering properties. Here we demonstrate a novel approach for fabrication of ordered hybrid nanostructures via femtosecond laser melting of asymmetrical metal-dielectric (Au-Si) nanoparticles created by lithographical methods. The approach allows selective reshaping of the metal components of the hybrid nanoparticles without affecting dielectric ones. We apply the developed approach for tuning of the hybrid nanostructures scattering properties in the visible range. The experimental results are supported by molecular dynamics simulation and numerical solving of Maxwell equations.
Despite decades of research, the ultimate goal of nanotechnology--top-down manipulation of individual atoms--has been directly achieved with only one technique: scanning probe microscopy. In this Review, we demonstrate that scanning transmission electron microscopy (STEM) is emerging as an alternative method for the direct assembly of nanostructures, with possible applications in plasmonics, quantum technologies, and materials science. Atomically precise manipulation with STEM relies on recent advances in instrumentation that have enabled non-destructive atomic-resolution imaging at lower electron energies. While momentum transfer from highly energetic electrons often leads to atom ejection, interesting dynamics can be induced when the transferable kinetic energies are comparable to bond strengths in the material. Operating in this regime, very recent experiments have revealed the potential for single-atom manipulation using the Angstrom-sized electron beam. To truly enable control, however, it is vital to understand the relevant atomic-scale phenomena through accurate dynamical simulations. Although excellent agreement between experiment and theory for the specific case of atomic displacements from graphene has been recently achieved using density functional theory molecular dynamics, in many other cases quantitative accuracy remains a challenge. We provide a comprehensive reanalysis of available experimental data on beam-driven dynamics in light of the state-of-the-art in simulations, and identify important targets for improvement. Overall, the modern electron microscope has great potential to become an atom-scale fabrication platform, especially for covalently bonded 2D nanostructures. We review the developments that have made this possible, argue that graphene is an ideal starting material, and assess the main challenges moving forward.
This paper addresses the structural characterisation of a series of U/Fe, U/Co and U/Gd multilayers. X-ray reflectivity has been employed to investigate the layer thickness and roughness parameters along the growth direction and high-angle diffraction measurements have been used to determine the crystal structure and orientation of the layers. For the case of uranium/transition metal systems, the interfaces are diffuse and the transition metals are present in a polycrystalline form of their common bulk phases with a preferred orientation along the closest packed planes; Fe, bcc (110) and Co, hcp (001), respectively. The uranium is present in a poorly crystalline orthorhombic, alpha-U state. In contrast, the U/Gd multilayers have sharp interfaces with negligible intermixing of atomic species, and have a roughness, which is strongly dependent on the gadolinium layer thickness. Diffraction spectra indicate a high degree of crystallinity in both U and Gd layers with intensities consistent with the growth of a novel hcp U phase, stabilised by the hcp gadolinium layers.
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as non-volatile memory elements.
The monolayer Gallium sulfide (GaS) was demonstrated as a promising two-dimensional semiconductor material with considerable band gaps. The present work investigates the band gap modulation of GaS monolayer under biaxial or uniaxial strain by using Density functional theory calculation. We found that GaS monolayer shows an indirect band gap that limits its optical applications. The results show that GaS monolayer has a sizable band gap. The uniaxial strain shifts band gap from indirect to direct in Gallium monochalcogenides (GaS). This behavior, allowing applications such as electroluminescent devices and laser. The detailed reasons for the band gap modulation are also discussed by analyzing the projected density of states (PDOS). It indicates that due to the role of p$_y$ orbital through uniaxial strain become more significant than others near the Fermi level. The indirect to direct band gap transition happen at $varepsilon$=-10y$%$. Moreover, by investigating the strain energy and transverse response of structures under uniaxial strain, we show that the GaS monolayer has the Poissons ratio of 0.23 and 0.24 in the zigzag (x) and armchair (y) directions, respectively. Thus, we conclude that the isotropic nature of mechanical properties under strain.
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