We have performed a series of measurements on the low temperature behavior of a magnetic nano-particle system. Our results show striking memory effects in the dc magnetization. Dipolar interactions among the nano-particles {em suppress} the memory effect. We explain this phenomenon by the superposition of different super paramagnetic relaxation times of single domain magnetic nano- particles. Moreover, we observe a crossover in the temperature dependence of coercivity. We show that a dilute dispersion of particles with a flat size distribution yields the best memory.
In this Comment we report a phenomenon identical to that observed in ({Y. Sun, M. B. Salamon, K. Garnier and R. S. Averback, Phys. Rev. Lett. 91, 167206 (2003)}) for systems of NiFe{$_2$}O{$_4$} particles (mean size $approx$ 3nm) embedded in a SiO{$_2$} matrix with two different interparticle spacings 4 nm (1) and 15 nm (2), which controls the strength of the dipolar interactions. Not only do we find the memory effect to be present in the non-interacting sample (2), indeed we find it to be {em more} prominent than in the interacting case (1). We demonstrate that this effect can be simply attributed to a superposition of relaxation times of two sets of particles.
We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticles.
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
The exploration of exchange bias (EB) on the nanoscale provides a novel approach to improving the anisotropic properties of magnetic nanoparticles for prospective applications in nanospintronics and nanomedicine. However, the physical origin of EB is not fully understood. Recent advances in chemical synthesis provide a unique opportunity to explore EB in a variety of iron oxide-based nanostructures ranging from core/shell to hollow and hybrid composite nanoparticles. Experimental and atomistic Monte Carlo studies have shed light on the roles of interface and surface spins in these nanosystems. This review paper aims to provide a thorough understanding of the EB and related phenomena in iron oxide-based nanoparticle systems, knowledge of which is essential to tune the anisotropic magnetic properties of exchange-coupled nanoparticle systems for potential applications.
The nano-particle systems under theoretically and experimentally investigation because of the potential applications in the nano-technology such as drug delivery, ferrofluids mechanics, magnetic data storage, sensors, magnetic resonance imaging, and cancer therapy. Recently, it is reported that interacting nano-particles behave as spin-glasses and experimentally show that the relaxation of these systems obeys stretched exponential i.e., KWW relaxation. Therefore, in this study, considering the interacting nano-particle systems we model the relaxation and investigate frequency and temperature behaviour depends on slow relaxation by using a simple operator formalism. We show that relaxation deviates from Debye and obeys to KWW in the presence of the memory effects in the system. Furthermore, we obtain the frequency and temperature behaviour depend on KWW relaxation. We conclude that the obtained results are consistent with experimental results and the simple model, presented here, is very useful and pedagogical to discuss the slow relaxation of the interacting nano-particles.