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Register a new userCritical current density and flux pinning in La2-xPrxCa2xBa2Cu4+2xOz (x = 0.1 - 0.5) superconductors
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Rayaprol Sudhindra Dr.
Publication date
2004
fields
Physics
and research's language is
English
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Polycrystalline La2-xPrxCa2xBa2Cu4+2xOz (LPCaBCO) compounds with x = 0.1 - 0.5 were synthesized by solid-state reaction method and studied by room temperature X-ray diffraction, dc resistivity, dc magnetization and iodometry. The superconducting transition temperatures in these tetragonal triple perovskite compounds increases from 32 to 62 K (Tconset values) with increasing dopant concentration. The mixing of rare earth La3+ and Pr3+/4+ ions at rare earth site (La3+) along with substitution of divalent Ca2+ results in the shrinkage of unit cell volume. The contraction of unit cell volume due to larger ion being substituted by smaller ions, gives rise to creation of pinning centers in the unit cell leading to increase in critical current density and flux pinning
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Structural studies on Dy-substituted La-2125 type superconductors have been carried out by neutron diffraction experiments at room temperature using a monochromatic neutron beam of wavelength lambda = 1.249 Angstroms. A series of samples with La2-xDyxCa2xBa2Cu4+2xOz stoichiometric composition, for x = 0.1 - 0.5, have been studied for their structural properties. A tetragonal Y-123 unit cell was taken as the starting model for the Rietveld analysis. All the samples fit into the starting model, exhibiting no structural transition taking place with increasing dopant concentration. The results of Rietveld analysis and structural properties are discussed in detail.
We investigated the effect of SiC nano-particle doping on the crystal lattice structure, critical temperature T_c, critical current density J_c, and flux pinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples with x = 0 to 1.0 were fabricated using in-situ reaction process. The contraction of the lattice and depression of T_c with increasing SiC doping level remained rather small due to the counter-balanced effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intra-grain defects and highly dispersed nano-inclusions within the grains which can act as effective pinning centers for vortices, improving J_c behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and a local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB_{2-x}(SiC)_{x/2} superconductors.
A series of polycrystalline SmFeAs1-xOx bulks was prepared to systematically investigate the influence of sample density on flux pinning properties. Different sample densities were achieved by controlling the pelletizing pressure. The superconducting volume fraction, the critical current densities Jcm and the flux pinning force densities Fp were estimated from the magnetization measurements. Experimental results manifest that: (1) the superconducting volume fraction decreases with the decreasing of sample density. (2) The Jcm values have the similar trend except for the sample with very high density may due to different connectivity and pinning mechanism. Moreover, The Jcm(B) curve develops a peak effect at approximately the same field at which the high-density sample shows a kink. (3) The Fp(B) curve of the high-density sample shows a low-field peak and a high-field peak at several temperatures, which can be explained by improved intergranular current, while only one peak can be observed in Fp(B) of the low-density samples. Based on the scaling behaviour of flux pinning force densities, the main intragranular pinning is normal point pinning.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
A series of high quality BaFe$_{2-x}$Ni$_x$As$_2$ pnictide superconductors were studied using magnetic relaxation and isothermal magnetic measurements in order to study the second magnetization peak (SMP) and critical current behaviour in Ni-doped 122 family. The temperature dependence of the magnetic relaxation rate suggests a pinning crossover, whereas, its magnetic field dependence hints a vortex-lattice structural phase-transition. The activation energy ($U$) estimated using the magnetic relaxation data was analyzed in detail for slightly-underdoped, slightly-overdoped and an overdoped samples, using Maleys method and collective creep theory. Our results confirm that the SMP in these samples is due to the collective (elastic) to plastic creep crossover as has been observed for the other members of 122-family. In addition, we also investigated the doping dependence of the critical current density ($J_c$) and the vortex-pinning behaviour in these compounds. The observed $J_c$ is higher than the threshold limit (10$^5$ A/cm$^2$) considered for the technological potential and even greater than 1 MA/cm$^2$ for slightly underdoped Ni-content, x = 0.092 sample. The pinning characteristics were analyzed in terms of the models developed by Dew-Hughes and Griessen $et$ $al$, which suggest the dominant role of $delta l$-type pinning.
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