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Register a new userProtected Qubits and Chern Simons theories in Josephson Junction Arrays
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We present general symmetry arguments that show the appearance of doubly denerate states protected from external perturbations in a wide class of Hamiltonians. We construct the simplest spin Hamiltonian belonging to this class and study its properties both analytically and numerically. We find that this model generally has a number of low energy modes which might destroy the protection in the thermodynamic limit. These modes are qualitatively different from the usual gapless excitations as their number scales as the linear size (instead of volume) of the system. We show that the Hamiltonians with this symmetry can be physically implemented in Josephson junction arrays and that in these arrays one can eliminate the low energy modes with a proper boundary condition. We argue that these arrays provide fault tolerant quantum bits. Further we show that the simplest spin model with this symmetry can be mapped to a very special Z_2 Chern-Simons model on the square lattice. We argue that appearance of the low energy modes and the protected degeneracy is a natural property of lattice Chern-Simons theories. Finally, we discuss a general formalism for the construction of discrete Chern-Simons theories on a lattice.
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We study the dynamic response to external currents of periodic arrays of Josephson junctions, in a resistively capacitively shunted junction (RCSJ) model, including full capacitance-matrix effects}. We define and study three different models of the capacitance matrix $C_{vec{r},vec{r}}$: Model A includes only mutual capacitances; Model B includes mutual and self capacitances, leading to exponential screening of the electrostatic fields; Model C includes a dense matrix $C_{vec{r},vec{r}}$ that is constructed approximately from superposition of an exact analytic solution for the capacitance between two disks of finite radius and thickness. In the latter case the electrostatic fields decay algebraically. For comparison, we have also evaluated the full capacitance matrix using the MIT fastcap algorithm, good for small lattices, as well as a corresponding continuum effective-medium analytic evaluation of a finite voltage disk inside a zero-potential plane. In all cases the effective $C_{vec{r},vec{r}}$ decays algebraically with distance, with different powers. We have then calculated current voltage characteristics for DC+AC currents for all models. We find that there are novel giant capacitive fractional steps in the I-Vs for Models B and C, strongly dependent on the amount of screening involved. We find that these fractional steps are quantized in units inversely proportional to the lattice sizes and depend on the properties of $C_{vec{r},vec{r}}$. We also show that the capacitive steps are not related to vortex oscillations but to localized screened phase-locking of a few rows in the lattice. The possible experimental relevance of these results is also discussed.
We numerically investigate the intriguing effects produced by random percolative disorder in two-dimensional Josephson-junction arrays. By dynamic scaling analysis, we evaluate critical temperatures and critical exponents with high accuracy. It is observed that, with the introduction of site-diluted disorder, the Kosterlitz-Thouless phase transition is eliminated and evolves into a continuous transition with power-law divergent correlation length. Moreover, genuine depinning transition and creep motion are studied, evidence for distinct creep motion types is provided. Our results not only are in good agreement with the recent experimental findings, but also shed some light on the relevant phase transitions.
We have measured the excited state lifetimes in Josephson junction phase and transmon qubits, all of which were fabricated with the same scalable multi-layer process. We have compared the lifetimes of phase qubits before and after removal of the isolating dielectric, SiNx, and find a four-fold improvement of the relaxation time after the removal. Together with the results from the transmon qubit and measurements on coplanar waveguide resonators, these measurements indicate that the lifetimes are limited by losses from the dielectric constituents of the qubits. We have extracted the individual loss contributions from the dielectrics in the tunnel junction barrier, AlOx, the isolating dielectric, SiNx, and the substrate, Si/SiO2, by weighing the total loss with the parts of electric field over the different dielectric materials. Our results agree well and complement the findings from other studies, demonstrating that superconducting qubits can be used as a reliable tool for high-frequency characterization of dielectric materials. We conclude with a discussion of how changes in design and material choice could improve qubit lifetimes up to a factor of four.
Although Josephson junction qubits show great promise for quantum computing, the origin of dominant decoherence mechanisms remains unknown. We report Rabi oscillations for an improved phase qubit, and show that their coherence amplitude is significantly degraded by spurious microwave resonators. These resonators arise from changes in the junction critical current produced by two-level states in the tunnel barrier. The discovery of these high frequency resonators impacts the future of all Josephson qubits as well as existing Josephson technologies. We predict that removing or reducing these resonators through materials research will improve the coherence of all Josephson qubits.
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W. A. C. Passos
, F. M. Araujo-Moreira
, W. A. Ortiz (Grupo den Supercondutividade e Magnetismo
1999
In this work we study the magnetic remanence exhibited by Josephson junction arrays in response to an excitation with an AC magnetic field. The effect, predicted by numerical simulations to occur in a range of temperatures, is clearly seen in our tridimensional disordered arrays. We also discuss the influence of the critical current distribution on the temperature interval within which the array develops a magnetic remanence. This effect can be used to determine the critical current distribution of an array.
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