Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userBallistic transport in AlAs two-dimensional electrons
287
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two frequency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce $m_l/m_t=5.2pm0.5$ for the ratio of the longitudinal and transverse electron effective masses.
rate research
Read More
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.
We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the samples fractional length change) in this system exceeds 10,000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56,000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.
We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$AA$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases as the density is decreased, following closely the prediction of quantum Monte Carlo calculations and continuing at finite values through the metal-insulator transition.
Gas permeation through nanoscale pores is ubiquitous in nature and plays an important role in a plethora of technologies. Because the pore size is typically smaller than the mean free path of gas molecules, their flow is conventionally described by the Knudsen theory that assumes diffuse reflection (random-angle scattering) at confining walls. This assumption has proven to hold surprisingly well in experiment, and only a few cases of partially specular (mirror-like) reflection are known. Here we report gas transport through angstrom-scale channels with atomically-flat walls and show that surface scattering can be both diffuse or specular, depending on fine details of the surface atomic landscape, and quantum effects contribute to the specularity at room temperature. The channels made from graphene or boron nitride allow a helium gas flow that is orders of magnitude faster than expected from the theory. This is explained by specular surface scattering, which leads to ballistic transport and frictionless gas flow. Similar channels but with molybdenum disulfide walls exhibit much slower permeation that remains well described by Knudsen diffusion. The difference is attributed to stronger atomic corrugations at MoS2 surfaces, which are similar in height to the size of transported atoms and their de Broglie wavelength. The importance of the latter, matter-wave contribution is corroborated by the observation of a reversed isotope effect in which the mass flow of hydrogen is notably higher than that of deuterium, in contrast to the relation expected for classical flows. Our results provide insights into atomistic details of molecular permeation, which so far could be accessed only in simulations, and show a possibility of studying gas transport under a controlled confinement comparable to the quantum-mechanical size of atoms.
In an idealized infinite crystal, the material properties are constrained by the symmetries of its unit cell. Naturally, the point-group symmetry is broken by the sample shape of any finite crystal, yet this is commonly unobservable in macroscopic metals. To sense the shape-induced symmetry lowering in such metals, long-lived bulk states originating from anisotropic Fermi surfaces are needed. Here we show how strongly facetted Fermi surfaces and long quasiparticle mean free paths present in microstructures of PdCoO2 yield an in-plane resistivity anisotropy that is forbidden by symmetry on an infinite hexagonal lattice. Bar shaped transport devices narrower than the mean free path are carved from single crystals using focused ion beam (FIB) milling, such that the ballistic charge carriers at low temperatures frequently collide with both sidewalls defining a channel. Two symmetry-forbidden transport signatures appear: the in-plane resistivity anisotropy exceeds a factor of 2, and transverse voltages appear in zero magnetic field. We robustly identify the channel direction as the source of symmetry breaking via ballistic Monte- Carlo simulations and numerical solution of the Boltzmann equation.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
