The microwave, near-millimetre and infrared (IR) dielectric response of Srn+1TinO3n+1 (n=1-4) Ruddlesden-Popper homologous series was studied in the temperature range 10 to 300 K. Remarkable softening of the polar optical mode was observed in Sr4Ti3O10 and Sr5Ti4O13 which explains the increase in microwave permittivity and dielectric loss upon cooling. However, both samples have a distinct content of SrTiO3 dispersed between SrO layers. It is proposed therefore that the observed soft mode originates from the SrTiO3 microscopic inclusions.
Herein we employed high-resolution spectroscopic techniques in combination with periodic ab initio density functional theory (DFT) calculations to establish the different polarization processes for a porous copper-based MOF, termed HKUST-1. We used alternating current measurements to determine its dielectric response between 4 Hz and 1.5 MHz where orientational polarization is predominant, while synchrotron infrared (IR) reflectance was used to probe the far-IR, mid-IR, and near-IR dielectric response across the 1.2 THz to 150 THz range (ca. 40 - 5000 cm^-1) where vibrational and optical polarizations are principal contributors to its dielectric permittivity. We demonstrate the role of pressure on the evolution of broadband dielectric response, where THz vibrations reveal distinct blue and red shifts of phonon modes from structural deformation of the copper paddle-wheel and the organic linker, respectively. We also investigated the effect of temperature on dielectric constants in the MHz region pertinent to microelectronics, to study temperature-dependent dielectric losses via dissipation in an alternating electric field. The DFT calculations offer insights into the physical mechanisms responsible for dielectric transitions observed in the experiments and enable us to explain the frequency shifts phenomenon detected under pressure. Together, the experiments and theory have enabled us to glimpse into the complex dielectric response and mechanisms underpinning a prototypical MOF subject to pressure, temperature, and vast frequencies.
It has been considered that polar nanoregions in relaxors form at Burns temperature Td approx 600 K. High-temperature dielectric investigations of Pb(Mg1/3Nb2/3)O3 (PMN) and 0.7PMN-0.3PbTiO3 reveal, however, that the dielectric dispersion around 600 K appears due to the surface-layer contributions. The intrinsic response, analyzed in terms of the universal scaling, imply much higher Td or formation of polar nanoregions in a broad temperature range, while high dielectric constants manifest that polar order exists already at the highest measured temperatures of 800 K. The obtained critical exponents indicate critical behavior associated with universality classes typically found in spin glasses.
Single crystals of iridates are usually grown by a flux method well above the boiling point of the SrCl2 solvent. This leads to non-equilibrium growth conditions and dramatically shortens the lifetime of expensive Pt crucibles. Here, we report the growth of Sr2IrO4, Sr3Ir2O7 and SrIrO3 single crystals in a reproducible way by using anhydrous SrCl2 flux well below its boiling point. We show that the yield of the different phases strongly depends on the nutrient/solvent ratio for fixed soak temperature and cooling rate. Using this low-temperature growth approach generally leads to a lower temperature-independent contribution to the magnetic susceptibility than previously reported. Crystals of SrIrO3 exhibit a paramagnetic behavior that can be remarkably well fitted with a Curie-Weiss law yielding physically reasonable parameters, in contrast to previous reports. Hence, reducing the soak temperature below the solvent boiling point not only provides more stable and controllable growth conditions in contrast to previously reported growth protocols, but also extends considerably the lifetime of expensive platinum crucibles and reduces the corrosion of heating and thermoelements of standard furnaces, thereby reducing growth costs.
Tungsten carbide cobalt hardmetals are commonly used as cutting tools subject to high operation temperature and pressures, where the mechanical performance of the tungsten carbide phase affects the wear and lifetime of the material. In this study, the mechanical behaviour of the isolated tungsten carbide (WC) phase was investigated using single crystal micropillar compression. Micropillars 1-5 ${mu}$m in diameter, in two crystal orientations, were fabricated using focused ion beam (FIB) machining and subsequently compressed between room temperature and 600 {deg}C. The activated plastic deformation mechanisms were strongly anisotropic and weakly temperature dependent. The flow stresses of basal-oriented pillars were about three times higher than the prismatic pillars, and pillars of both orientations soften slightly with increasing temperature. The basal pillars tended to deform by either unstable cracking or unstable yield, whereas the prismatic pillars deformed by slip-mediated cracking. However, the active deformation mechanisms were also sensitive to pillar size and shape. Slip trace analysis of the deformed pillars showed that {10-10} prismatic planes were the dominant slip plane in WC. Basal slip was also identified as a secondary slip system, activated at high temperatures.
Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, and ambient stability of BAs nanosheets are investigated using STEM imaging and spectroscopy. Atomic-resolution HAADF-STEM images directly visualize the three-dimensional structure and evaluate the degree of anisotropy. STEM-EELS is used to measure the dielectric response of BAs as a function of the number of layers. Finally, BAs degradation under different ambient environments is studied highlighting high sensitivity to moisture in the air.
D. Noujni
,S. Kamba
,A. Pashkin
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(2004)
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"Temperature dependence of microwave and THz dielectric response in Srn+1TinO3n+1 (n=1-4)"
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Stanislav Kamba
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