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Different approaches in quantifying environmentally-induced decoherence are considered. We identify a measure of decoherence, derived from the density matrix of the system of interest, that quantifies the environmentally induced error, i.e., deviation from the ideal isolated-system dynamics. This measure can be shown to have several useful features. Its behavior as a function of time has no dependence on the initial conditions, and is expected to be insensitive to the internal dynamical time scales of the system, thus only probing the decoherence-related time dependence. For a spin-boson model - a prototype of a qubit interacting with environment - we also demonstrate the property of additivity: in the regime of the onset of decoherence, the sum of the individual qubit error measures provides an estimate of the error for a several-qubit system, even if the qubits are entangled, as expected in quantum-computing applications. This makes it possible to estimate decoherence for several-qubits quantum computer gate designs for which explicit calculations are exceedingly difficult.
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We demonstrate how gradient ascent pulse engineering optimal control methods can be implemented on donor electron spin qubits in Si semiconductors with an architecture complementary to the original Kanes proposal. We focus on the high-fidelity controlled-NOT (CNOT) gate and explicitly find its digitized control sequences by optimizing its fidelity over the external controls of the hyperfine A and exchange J interactions. This high-fidelity CNOT gate has an error of about $10^{-6}$, below the error threshold required for fault-tolerant quantum computation, and its operation time of 100ns is about 3 times faster than 297ns of the proposed global control scheme. It also relaxes significantly the stringent distance constraint of two neighboring donor atoms of 10~20nm as reported in the original Kanes proposal to about 30nm in which surface A and J gates may be built with current fabrication technology. The effects of the control voltage fluctuations, the dipole-dipole interaction and the electron spin decoherence on the CNOT gate fidelity are also discussed.
A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet-triplet qubit or two single-spin qubits coupled by exchange interaction. In this article, we report progress on spin dephasing of two exchange-coupled spins in a double quantum dot. We first discuss the schemes of two-qubit gates and qubit encodings in gate-defined quantum dots or donor atoms based on the exchange interaction. Then, we report the progress on spin dephasing of a singlet-triplet qubit or a two-qubit gate. The methods of suppressing spin dephasing are further discussed. The understanding of spin dephasing may provide insights into the realization of high-fidelity quantum gates for spin-based quantum computing.
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 K and 300 K. The electrons dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction (ELOPI). Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature.
The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of correlations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression of classical noise. Here we obtain a general expression for decoherence times of the central spin system which exposes significant differences between quantum-bath decoherence and decoherence by classical field noise. We perform measurements of decoherence times of bismuth donors in natural silicon using both electron spin resonance (ESR) and nuclear magnetic resonance (NMR) transitions, and in both cases find excellent agreement with our theory across a wide parameter range. The universality of our expression is also tested by quantitative comparisons with previous measurements of decoherence around `optimal working points or `clock transitions where decoherence is strongly suppressed. We further validate our results by comparison to cluster expansion simulations.
We use the Bloch-Redfield-Wangsness theory to calculate the effects of acoustic phonons in coherent control experiments, where quantum-dot excitons are driven by shaped laser pulses. This theory yields a generalized Lindblad equation for the density operator of the dot, with time-dependent damping and decoherence due to phonon transitions between the instantaneous dressed states. It captures similar physics to the form recently applied to Rabi oscillation experiments [A. J. Ramsay et al., Phys. Rev. Lett. 104, 017402 (2010)], but guarantees positivity of the density operator. At sufficiently low temperatures, it gives results equivalent to those of fully non-Markovian approaches [S. Luker et al., Phys. Rev. B 85, 121302 (2012)], but is significantly simpler to simulate. Several applications of this theory are discussed. We apply it to adiabatic rapid passage experiments, and show how the pulses can be shaped to maximize the probability of creating a single exciton using a frequency-swept laser pulse. We also use this theory to propose and analyze methods to determine the phonon density of states experimentally, i.e. phonon spectroscopy, by exploring the dependence of the effective damping rates on the driving field.
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