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Register a new userEvidence of spontaneous spin polarized transport in magnetic nanowires
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The exploitation of the spin in charge-based systems is opening revolutionary opportunities for device architecture. Surprisingly, room temperature electrical transport through magnetic nanowires is still an unresolved issue. Here, we show that ferromagnetic (Co) suspended atom chains spontaneously display an electron transport of half a conductance quantum, as expected for a fully polarized conduction channel. Similar behavior has been observed for Pd (a quasi-magnetic 4d metal) and Pt (a non-magnetic 5d metal). These results suggest that the nanowire low dimensionality reinforces or induces magnetic behavior, lifting off spin degeneracy even at room temperature and zero external magnetic field.
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The interaction between a spin polarized dc electrical current and spin wave modes of a cylindrical nanowire is investigated in this report. We found that close to the critical current, the uniform mode is suppressed, while the edge mode starts to propagate into the sample. When the current exceeds the critical value, this phenomenon is even more accentuated. The edge mode becomes the uniform mode of the nanowire. The higher spin wave modes are slowly pushed away by the current until the propagating mode remains.
We study a double-nanowire setup proximity coupled to an $s$-wave superconductor and search for the bulk signatures of the topological phase transition that can be observed experimentally, for example, with an STM tip. Three bulk quantities, namely, the charge, the spin polarization, and the pairing amplitude of intrawire superconductivity are studied in this work. The spin polarization and the pairing amplitude flip sign as the system undergoes a phase transition from the trivial to the topological phase. In order to identify promising ways to observe bulk signatures of the phase transition in transport experiments, we compute the spin current flowing between a local spin-polarized probe, such as an STM tip, and the double-nanowire system in the Keldysh formalism. We find that the spin current contains information about the sign flip of the bulk spin polarization and can be used to determine the topological phase transition point.
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition technique. The total thickness of the film was about 200 nm. The films show ferromagnetic behavior for temperatures ranging from 4 to $400 ^oK$. The layered film structure was characterized as p-type magnetic semiconductor at $300 ^oK$ with a carrier density of the order of $10^{20} /cm^3$. The undoped pure TiO$_{2-delta}$ film was characterized as an n-type magnetic semiconductor. The hole carriers were excited at the interface between the granular Fe and TiO$_{2-delta}$ layers similar to holes excited in the metal/n-type semiconductor interface commonly observed in Metal-Oxide-Semiconductor (MOS) devices. The holes at the interface were polarized in an applied magnetic field raising the possibility that these granular MOS structures can be utilized for practical spintronic device applications.
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.
We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bi-crystal grain boundary junction in perovskite manganite La_{2/3}Sr_{1/3}MnO_3 thin film. By gradually trimming the junction we have been able to reveal the non-linear behavior of the latter. With the use of the relation M_{GB} propto M_{bulk}sqrt{MR^*} we have extracted the grain boundary magnetization. Further, we demonstrate that the built-in potential barrier of the grain boundary can be modelled by V_{bi}propto M_{bulk}^2 - M_{GB}^2. Thus our model connects the magnetoresistance with the potential barrier at the grain boundary region. The results indicate that the band-bending at the grain boundary interface has a magnetic origin.
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