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Register a new userScanning Tunneling Spectroscopy in MgB 2
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We present extensive Scanning Tunneling Spectroscopy (STM/S) measurements at low temperatures in the multiband superconductor MgB$_2$. We find a similar behavior in single crystalline samples and in single grains, which clearly shows the partial superconducting density of states of both the $pi$ and $sigma$ bands of this material. The superconducting gaps corresponding to both bands are not single valued. Instead, we find a distribution of superconducting gaps centered around 1.9mV and 7.5mV, corresponding respectively to each set of bands. Interband scattering effects, leading to a single gap structure at 4mV and a smaller critical temperature can be observed in some locations on the surface. S-S junctions formed by pieces of MgB$_2$ attached to the tip clearly show the subharmonic gap structure associated with this type of junctions. We discuss future developments and possible new effects associated with the multiband nature of superconductivity in this compound.
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We perform the scanning tunneling spectroscopy based superconductor-vacuum-superconductor analogue to the seminal McMillan and Rowell superconductor-insulator-superconductor device study of phonons in the archetypal elemental superconductor Pb [W. L. McMillan and J. M. Rowell, Phys. Rev. Lett. 14, 108 (1965)]. We invert this spectroscopic data utilizing strong-coupling Eliashberg theory to obtain a local {alpha}^2F({omega}) and find broad underlying agreement with the pioneering results, highlighted by previously unobserved electron-hole asymmetries and new fine structure which we discuss in terms of both conventional and unconventional superconducting bosonics.
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We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap delta=2.3-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, delta=7.2 meV, consistent with a proposed two-band model.
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