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Register a new userDynamical Mean Field Theory, Model Hamiltonians and First Principles Electronic Structure Calculations
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We review the basic ideas of the dynamical mean field theory (DMFT) and some of the insights into the electronic structure of strongly correlated electrons obtained by this method in the context of model Hamiltonians. We then discuss the perspectives for carrying out more realistic DMFT studies of strongly correlated electron systems and we compare it with existent methods, LDA and LDA+U. We stress the existence of new functionals for electronic structure calculations which allow us to treat situations where the single--particle description breaks down such as the vicinity of the Mott transition.
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The description of realistic strongly correlated systems has recently advanced through the combination of density functional theory in the local density approximation (LDA) and dynamical mean field theory (DMFT). This LDA+DMFT method is able to treat both strongly correlated insulators and metals. Several interfaces between LDA and DMFT have been used, such as (N-th order) Linear Muffin Tin Orbitals or Maximally localized Wannier Functions. Such schemes are however either complex in use or additional simplifications are often performed (i.e., the atomic sphere approximation). We present an alternative implementation of LDA+DMFT, which keeps the precision of the Wannier implementation, but which is lighter. It relies on the projection of localized orbitals onto a restricted set of Kohn-Sham states to define the correlated subspace. The method is implemented within the Projector Augmented Wave (PAW) and within the Mixed Basis Pseudopotential (MBPP) frameworks. This opens the way to electronic structure calculations within LDA+DMFT for more complex structures with the precision of an all-electron method. We present an application to two correlated systems, namely SrVO3 and beta-NiS (a charge-transfer material), including ligand states in the basis-set. The results are compared to calculations done with Maximally Localized Wannier functions, and the physical features appearing in the orbitally resolved spectral functions are discussed.
The ground state electronic structures of the actinide oxides AO, A2O3 and AO2 (A=U, Np, Pu, Am, Cm, Bk, Cf) are determined from first-principles calculations, using the self-interaction corrected local spin-density (SIC-LSD) approximation. Emphasis is put on the degree of f-electron localization, which for AO2 and A2O3 is found to follow the stoichiometry, namely corresponding to A(4+) ions in the dioxide and A(3+) ions in the sesquioxides. In contrast, the A(2+) ionic configuration is not favorable in the monoxides, which therefore become metallic. The energetics of the oxidation and reduction of the actinide dioxides is discussed, and it is found that the dioxide is the most stable oxide for the actinides from Np onwards. Our study reveals a strong link between preferred oxidation number and degree of localization which is confirmed by comparing to the ground state configurations of the corresponding lanthanide oxides. The ionic nature of the actinide oxides emerges from the fact that only those compounds will form where the calculated ground state valency agrees with the nominal valency expected from a simple charge counting.
A versatile method for combining density functional theory (DFT) in the local density approximation (LDA) with dynamical mean-field theory (DMFT) is presented. Starting from a general basis-independent formulation, we use Wannier functions as an interface between the two theories. These functions are used for the physical purpose of identifying the correlated orbitals in a specific material, and also for the more technical purpose of interfacing DMFT with different kinds of band-structure methods (with three different techniques being used in the present work). We explore and compare two distinct Wannier schemes, namely the maximally-localized-Wannier-function (MLWF) and the $N$-th order muffin-tin-orbital (NMTO) methods. Two correlated materials with different degrees of structural and electronic complexity, SrVO3 and BaVS3, are investigated as case studies. SrVO3 belongs to the canonical class of correlated transition-metal oxides, and is chosen here as a test case in view of its simple structure and physical properties. In contrast, the sulfide BaVS3 is known for its rich and complex physics, associated with strong correlation effects and low-dimensional characteristics. New insights into the physics associated with the metal-insulator transition of this compound are provided, particularly regarding correlation-induced modifications of its Fermi surface. Additionally, the necessary formalism for implementing self-consistency over the electronic charge density in a Wannier basis is discussed.
We present a review of the basic ideas and techniques of the spectral density functional theory which are currently used in electronic structure calculations of strongly-correlated materials where the one-electron description breaks down. We illustrate the method with several examples where interactions play a dominant role: systems near metal-insulator transition, systems near volume collapse transition, and systems with local moments.
We present the first dynamical implementation of the combined GW and dynamical mean field scheme (GW+DMFT) for first principles calculations of the electronic properties of correlated materials. The application to the ternary transition metal oxide SrVO3 demonstrates that this schemes inherits the virtues of its two parent theories: a good description of the local low energy correlation physics encoded in a renormalized quasi-particle band structure, spectral weight transfer to Hubbard bands, and the physics of screening driven by long-range Coulomb interactions. Our data is in good agreement with available photoemission and inverse photoemission spectra; our analysis leads to a reinterpretation of the commonly accepted three-peak structure as originating from orbital effects rather than from the electron addition peak within the t2g manifold.
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