We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature (T = 4.2K), zero-bias magnetoconductance has shown a behavior with field that evidences the two-dimensional character of both electrons and holes and that has allowed us to determine the hole density and the electron-hole separation. The observed field dependence of the current-voltage characteristics is explained by the relative change in parallel momentum of electrons and holes induced by the field.
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