Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userStrain-induced quantum ring hole states in a gated vertical quantum dot
157
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in phi/phi0, but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures.
rate research
Read More
We theoretically investigate the optical functionality of a semiconducting quantum ring manipulated by two electrostatic lateral gates used to induce a double quantum well along the ring. The well parameters and corresponding inter-level spacings, which lie in the THz range, are highly sensitive to the gate voltages. Our analysis shows that selection rules for inter-level dipole transitions, caused by linearly polarized excitations, depend on the polarization angle with respect to the gates. In striking difference from the conventional symmetric double well potential, the ring geometry permits polarization-dependent transitions between the ground and second excited states, allowing the use of this structure in a three-level lasing scheme.
We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.
We have calculated the linear magnetoconductance across a vertical parabolic Quantum Dot with a magnetic field in the direction of the current. Gate voltage and magnetic field are tuned at the degeneracy point between the occupancies N=2 and N=3, close to the Singlet-Triplet transition for N=2. We find that the conductance is enhanced prior to the transition by nearby crossings of the levels of the 3 particle dot. Immediately after it is depressed by roughly 1/3, as long as the total spin S of the 3 electron ground state doesnt change from S=1/2 to S=3/2, due to spin selection rule. At low temperature this dip is very sharp, but the peak is recovered by increasing the temperature.
We investigate the electron states and optical absorption in square- and hexagonal-shaped two-dimensional (2D) HgTe quantum dots and quantum rings in the presence of a perpendicular magnetic field. The electronic structure is modeled by means of the $sp^3d^5s^*$ tight-binding method within the nearest-neighbor approximation. Both bulklike and edge states appear in the energy spectrum. The bulklike states in quantum rings exhibit Aharonov-Bohm oscillations in magnetic field, whereas no such oscillations are found in quantum dots, which is ascribed to the different topology of the two systems. When magnetic field varies, all the edge states in square quantum dots appear as quasibands composed of almost fully flat levels, whereas some edge states in quantum rings are found to oscillate with magnetic field. However, the edge states in hexagonal quantum dots are localized like in rings. The absorption spectra of all the structures consist of numerous absorption lines, which substantially overlap even for small line broadening. The absorption lines in the infrared are found to originate from transitions between edge states. It is shown that the magnetic field can be used to efficiently tune the optical absorption of HgTe 2D quantum dot and quantum ring systems.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
