The complex impedance of a semiconductor superlattice biased into the regime of negative differential conductivity and driven by an additional GHz ac voltage is computed. From a simulation of the nonlinear spatio-temporal dynamics of traveling field domains we obtain strong variations of the amplitude and phase of the impedance with increasing driving frequency. These serve as fingerprints of the underlying quasiperiodic or frequency locking behavior. An anomalous phase shift appears as a result of phase synchronization of the traveling domains. If the imaginary part of the impedance is compensated by an external inductor, both the frequency and the intensity of the oscillations strongly increase.
We examine the high-frequency differential conductivity response properties of semiconductor superlattices having various miniband dispersion laws. Our analysis shows that the anharmonicity of Bloch oscillations (beyond tight-binding approximation) leads to the occurrence of negative high-frequency differential conductivity at frequency multiples of the Bloch frequency. This effect can arise even in regions of positive static differential conductivity. The influence of strong electron scattering by optic phonons is analyzed. We propose an optimal superlattice miniband dispersion law to achieve high-frequency field amplification.
Using the dielectric resonator method, we have investigated nonlinearities in the surface impedance Zs = Rs + jXs of YBa2Cu3O7 thin films at 10 GHz as function of the incident microwave power level and temperature. The use of a rutile dielectric resonator allows us to measure the precise temperature of the films. We conclusively show that the usually observed increase of the surface resistance of YBa2Cu3O7 thin film as function of microwave power is due to local heating.
High frequency thickness mode ultrasound is an energy-efficient way to atomize high-viscosity fluid at high flow rate into fine aerosol mists of micron-sized droplet distributions. However the complex physics of the atomization process is not well understood. It is found that with low power the droplet vibrates at low frequency (O[100 Hz]) when driven by high-frequency ultrasound (O[1 MHz] and above). To study the mechanism of the energy transfer that spans these vastly different timescales, we measure the droplets interfacial response to 6.6~MHz ultrasound excitation using high-speed digital holography. We show that the onset of low-frequency capillary waves is driven by feedback interplay between the acoustic radiation pressure distribution and the droplet surface. These dynamics are mediated by the Young-Laplace boundary between the droplet interior and ambient environment. Numerical simulations are performed via global optimization against the rigorously defined interfacial physics. The proposed pressure-interface feedback model is explicitly based on the pressure distribution hypothesis. For low power acoustic excitation, the simulations reveal a stable oscillatory feedback that induces capillary wave formation. The simulation results are confirmed with direct observations of the microscale droplet interface dynamics as provided by the high resolution holographic measurements. The pressure-interface feedback model accurately predicts the on-source vibration amplitude required to initiate capillary waves, and interfacial oscillation amplitude and frequency. The radiation pressure distribution is likewise confirmed with particle migration observations. Viscous effects on wave attenuation are also studied by comparing experimental and simulated results for a pure water droplet and 90% wt.- 10% wt. glycerol-water solution droplet.
We show that GHz acoustic waves in semiconductor superlattices can induce THz electron dynamics that depend critically on the wave amplitude. Below a threshold amplitude, the acoustic wave drags electrons through the superlattice with a peak drift velocity overshooting that produced by a static electric field. In this regime, single electrons perform drifting orbits with THz frequency components. When the wave amplitude exceeds the critical threshold, an abrupt onset of Bloch-like oscillations causes negative differential velocity. The acoustic wave also affects the collective behavior of the electrons by causing the formation of localised electron accumulation and depletion regions, which propagate through the superlattice, thereby producing self-sustained current oscillations even for very small wave amplitudes. We show that the underlying single-electron dynamics, in particular the transition between the acoustic wave dragging and Bloch oscillation regimes, strongly influence the spatial distribution of the electrons and the form of the current oscillations. In particular, the amplitude of the current oscillations depends non-monotonically on the strength of the acoustic wave, reflecting the variation of the single-electron drift velocity.
We show that space-charge instabilities (electric field domains) in semiconductor superlattices are the attribute of absolute negative conductance induced by small constant and large alternating electric fields. We propose the efficient method for suppression of this destructive phenomenon in order to obtain a generation at microwave and THz frequencies in devices operating at room temperature. We theoretically proved that an unbiased superlattice with a moderate doping subjected to a microwave pump field provides a strong gain at third, fifth, seventh, etc. harmonics of the pump frequency in the conditions of suppressed domains.