A new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single electron transistor which operated at $T < 0.4$ K and had a moderate charge noise of $2.5 times 10^{-3}$ e/$sqrt{mathrm{Hz}}$ at 10 Hz. Based on nonlinearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV.
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