No Arabic abstract
We have carried out a detailed study of the chemical bonding for two room-temperature stable platinum silicide phases, tetragonal alpha-Pt_2Si and orthorhombic PtSi. An analysis of the valence electronic charge density reveals surprising evidence of covalent three-center bonds in both silicide phases, as well as two-dimensional metallic sheets in alpha-Pt_2Si. These elements of the bonding are further analyzed by constructing valence force field models using the results from recent first principles calculations of the six (nine) independent, non-zero elastic constants of alpha-Pt_2Si (PtSi). The resulting volume-, radial-, and angular-dependent force constants provide insight into the relative strength of various bonding elements as well as the trends observed in the elastic constants themselves. The valence force field analysis yields quantitative information about the nature of the chemical bonding which is not easily discernable from the more qualitative charge density plots. More generally, this study demonstrates that the detailed variations in the elastic constants of a material contain useful information about the chemical bonds which can be extracted using valence force field models. Inversely, these models also allow identification of specific elements of the chemical bonding with particular trends in the elastic constants, both within a given material and among a class of related materials.
We have carried out a first principles study of the elastic properties and electronic structure for two room-temperature stable Pt silicide phases, tetragonal alpha-Pt_2Si and orthorhombic PtSi. We have calculated all of the equilibrium structural parameters for both phases: the a and c lattice constants for alpha-Pt_2Si and the a, b, and c lattice constants and four internal structural parameters for PtSi. These results agree closely with experimental data. We have also calculated the zero-pressure elastic constants, confirming prior results for pure Pt and Si and predicting values for the six (nine) independent, non-zero elastic constants of alpha-Pt_2Si (PtSi). These calculations include a full treatment of all relevant internal displacements induced by the elastic strains, including an explicit determination of the dimensionless internal displacement parameters for the three strains in alpha-Pt_2Si for which they are non-zero. We have analyzed the trends in the calculated elastic constants, both within a given material as well as between the two silicides and the pure Pt and Si phases. The calculated electronic structure confirms that the two silicides are poor metals with a low density of states at the Fermi level, and consequently we expect that the Drude component of the optical absorption will be much smaller than in good metals such as pure Pt. This observation, combined with the topology found in the first principles spin-orbit split band structure, suggests that it may be important to include the interband contribution to the optical absorption, even in the infrared region.
We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidised Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO2 polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress and interactions with single water molecules of a natively oxidised Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidised and amorphous silica surfaces of 97 mJ/m2 and 90mJ/m2, respectively, at a water adsorption coverage of approximately 1 monolayer. The difference arises from the stronger interaction of the natively oxidised surface with liquid water, resulting in a higher heat of immersion (203 mJ/m2 vs. 166 mJ/m2), and may be explained in terms of the more pronounced water structuring close to the surface in alternating layers of larger and smaller density with respect to the liquid bulk. The computed force-displacement bonding curves may be a useful input for cohesive zone models where both the topographic details of the surfaces and the dependence of the attractive force on the initial surface separation and wetting can be taken into account.
Many calculations require a simple classical model for the interactions between sp^2-bonded carbon atoms, as in graphene or carbon nanotubes. Here we present a new valence force model to describe these interactions. The calculated phonon spectrum of graphene and the nanotube breathing-mode energy agree well with experimental measurements and with ab initio calculations. The model does not assume an underlying lattice, so it can also be directly applied to distorted structures. The characteristics and limitations of the model are discussed.
We combine infrared absorption and Raman scattering spectroscopies to explore the properties of the heavy transition metal dichalcogenide 1T-HfS$_2$. We employ the LO-TO splitting of the $E_u$ vibrational mode along with a reevaluation of mode mass, unit cell volume, and dielectric constant to reveal the Born effective charge. We find $Z^*_{rm{B}}$ = 5.3$e$, in excellent agreement with complementary first principles calculations. In addition to resolving controversy over the nature of chemical bonding in this system, we decompose Born charge into polarizability and local charge. We find $alpha$ = 5.07 AA$^3$ and $Z^{*}$ = 5.2$e$, respectively. Polar displacement-induced charge transfer from sulfur $p$ to hafnium $d$ is responsible for the enhanced Born charge compared to the nominal 4+ in hafnium. 1T-HfS$_2$ is thus an ionic crystal with strong and dynamic covalent effects. Taken together, our work places the vibrational properties of 1T-HfS$_2$ on a firm foundation and opens the door to understanding the properties of tubes and sheets.
Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The methods introduced allow easy derivation of valence force field parameters in terms of the Kleinman parameter $zeta$ and bulk properties of zincblende and diamond crystals. We start with a model suited for covalent and weakly ionic materials, where the valence force field parameters are derived in terms of $zeta$ and the bulk elastic constants $C_{11}$, $C_{12}$, and $C_{44}$. We show that this model breaks down as the material becomes more ionic and specifically when the elastic anisotropy factor $A = 2C_{44}/(C_{11}-C_{12}) > 2$. The analytic model can be stabilised for ionic materials by including Martins electrostatic terms with effective cation and anion charges in the valence force field model. Inclusion of effective charges determined via the optical phonon mode splitting provides a stable model for all but two of the materials considered (zincblende GaN and AlN). A stable model is obtained for all materials considered by also utilising the inner elastic constant $E_{11}$ to determine the magnitude of the effective charges used in the Coulomb interaction. Test calculations show that the models describe well structural relaxation in superlattices and alloys, and reproduce key phonon band structure features.