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Register a new userMagnetotunneling in a Two-Dimensional Electron-Hole System Near Equilibrium
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We have measured the zero-bias differential tunneling conductance of InAs/AlSb/GaS b/AlSb/InAs heterostructures at low temperatures (1.7K < T < 60K) and unde r a magnetic field at various angles with the heterostructures interfaces. Shubni kov-de Haas oscillations in the magnetoconductance reveal the two-dimensional (2D) character of the electrons accumulated at the InAs interfaces and yield their num ber in each of them. The temperature dependence of the oscillations suggests the f ormation of a field-induced energy gap at the Fermi level, similar to that observe d before in simpler 2D-2D tunneling systems. A calculation of the magnetoconductan ce that considers different 2D densities in the two InAs electrodes agrees with th e main observations, but fails to explain features that might be related to the pr esence of 2D holes in the GaSb region.
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The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same frequency. This result is explained quantitatively with a model of the conductance in which the 2D gases have different densities and can tunnel between Landau levels with different quantum indices. When the epitaxial growth conditions of the interfaces are optimized, the zero-bias magnetoconductance shows a single set of oscillations, thus proving that the asymmetry between the two electron gases can be eliminated.
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $ u = 1/3$) and spin-unpolarized ($ u = 2/5$) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic.
We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems.
We propose a state of excitonic solid for double layer two dimensional electron hole systems in transition metal dicalcogenides stacked on opposite sides of thin layers of BN. Properties of the exciton lattice such as its Lindemann ratio and possible supersolid behaviour are studied. We found that the solid can be stabilized relative to the fluid by the potential due to the BN.
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