Preliminary Synthesis of Carbon Nitride Thin Films by N$_2$/CH$_4$ Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films


Abstract in English

The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N$_2$/CH$_4$ gas mixture. The discharge analysis by optical emission spectroscopy shows that the increase in the N$_2$/CH$_4$ ratio involves an important production of the CN and C$_2$ radicals. In the films X-ray energy dispersion spectroscopy shows that the N/C ratio decreases when the CH$_4$ percentage in N$_2$ increases. Xray diffraction and electron diffraction are used to study the carbon nitride films nature. Scanning electron microscopy shows that the films consisted of nano-crystalline grains. Carbon balls are also present on the film surface for CH$_4$ percentage higher than 4%. The transmission electron microscopy confirms the nano-structure of the film and shows the isotropic etching of the substrates, during the film growth.

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