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Register a new userHighly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2
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Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a single-material device formed of van-der-Waals topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, we also demonstrate multi-level states, switched by electrical current, which can dramatically enhance the information capacity density and reduce computing costs. Thus, our observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of van-der-Waals magnets in the field of spin memory and spintronics.
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The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in order to utilize 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.
In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-magnetized ab plane. The PTHE covers the whole temperature region below Tc (~150 K) and a comparatively large value is observed at 100 K. Emergence of an internal gauge field was proposed to explain the origin of this large PTHE, which is either generated by the possible topological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spin structure formed during the in-plane magnetization. Our results promisingly provide an alternative detection method to the in-plane skyrmion formation and may bring brand-new prospective to magneto-transport studies in condensed matter physics.
Two-dimensional (2D) van der Waals (vdW) magnetic materials have recently been introduced as a new horizon in materials science and enable the potential applications for next-generation spintronic devices. Here, in this communication, the observations of stable Bloch-type magnetic skyrmions in single crystals of 2D vdW Fe3GeTe2 (FGT) are reported by using in-situ Lorentz transmission electron microscopy (TEM). We find the ground-state magnetic stripe domains in FGT transform into skyrmion bubbles when an external magnetic field is applied perpendicularly to the (001) thin plate with temperatures below the Curie-temperature TC. Most interestingly, a hexagonal lattice of skyrmion bubbles is obtained via field cooling manipulation with magnetic field applied along the [001] direction. Owing to their topological stability, the skyrmion bubble lattices are stable to large field-cooling tilted angles and further reproduced by utilizing the micromagnetic simulations. These observations directly demonstrate that the 2D vdW FGT possesses a rich variety of topological spin textures, being of a great promise candidate for future applications in the field of spintronics.
Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase transition temperature. We report that surprisingly an in-plane current can tune the magnetic state of nm-thin van der Waals ferromagnet Fe3GeTe2 from a hard magnetic state to a soft magnetic state. It is the direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe3GeTe2. And we further demonstrate a working model of a new nonvolatile magnetic memory based on the principle of our discovery in Fe3GeTe2, controlled by a tiny current. Our findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impacts on the future development of spintronic and magnetic memory.
The recent emergence of magnetic van der Waals materials allows for the investigation of current induced magnetization manipulation in two dimensional materials. Uniquely, Fe3GeTe2 has a crystalline structure that allows for the presence of bulk spin-orbit torques (SOTs), that we quantify in a Fe3GeTe2 flake. From the symmetry of the measured torques, we identify the current induced effective fields using harmonic analysis and find dominant bulk SOTs, which arise from the symmetry in the crystal structure. Our results show that Fe3GeTe2 uniquely can exhibit bulk SOTs in addition to the conventional interfacial SOTs enabling magnetization manipulation even in thick single layers without the need for complex multilayer engineering.
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