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Register a new userAnalytic approach to transport in Josephson junctions beyond the Andreev approximation: General theory and applications to the BEC-BCS crossover
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Transport in Josephson junctions is commonly described using a simplifying assumption called the Andreev approximation, which assumes that excitations are fixed at the Fermi momentum and only Andreev reflections occur at interfaces (with no normal reflections). This approximation is appropriate for BCS-type superconductors, where the chemical potential vastly exceeds the pairing gap, but it breaks down for superconductors with low carrier density, such as topological superconductors, doped semiconductors, or superfluid quantum gases. Here, we present a generic $analytical$ framework for calculating transport in Josephson junctions that lifts up the requirement of the Andreev approximation. Using this general framework, we study in detail transport in Josephson junctions across the BCS-BEC crossover, which describes the evolution from a BCS-type superconductor with loosely-paired Cooper pairs to a BEC of tighly-paired dimers. As the interaction is tuned from the BCS to the BEC regime, we find that the overall subgap current caused by multiple Andreev reflections decreases, but nonlinearities in the current-voltage characteristic called the subharmonic gap structure become more pronounced near the intermediate unitary limit, giving rise to sharp peaks and dips in the differential conductance with even $negative$ conductance at specific voltages.
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We present a theory of superconducting p-n junctions. We consider a 2-band model of doped bulk semiconductors with attractive interactions between the charge carriers and derive the superconducting order parameter, the quasiparticle density of states and the chemical potential as a function of semiconductor gap $Delta_0$ and the doping level $varepsilon$. We verify previous results for the quantum phase diagram (QPD) for a system with constant density of states in the conduction and valence band, which show BCS-Superconductor to Bose-Einstein-Condensation (BEC) and BEC to Insulator transitions as function of doping level and band gap. Then, we extend it to a 3D density of states and derive the QPD, finding that a BEC phase can only exist for small band gaps $Delta_0 < Delta_0^*$. For larger band gaps, there is a direct transition from an insulator to a BCS phase. Next, we apply this theory to study the properties of superconducting p-n junctions, deriving the spatial variation of the superconducting order parameter along the p-n junction. We find a spatial crossover between a BCS and BEC condensate, as the density of charge carriers changes across the p-n junction. For the 2D system, we find two regimes, when the bulk is in a BCS phase, a BCS-BEC-BCS junction with a single BEC layer, and a BCS-BEC-I-BEC-BCS junction with two layers of BEC condensates separated by an insulating layer. In 3D there can also be a conventional BCS-I-BCS junction for semiconductors with band gaps exceeding $Delta_0^*$. Thus, there can be BEC layers in the well controlled setting of doped semiconductors, where the doping level can be varied to change the thickness of BEC layers, making Bose Einstein Condensates possibly accessible to experimental transport and optical studies in solid state materials.
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