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Register a new userIn-memory computing based on all-optically controlled memristor
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Artificial intelligence is widely used in everyday life. However, an insufficient computing efficiency due to the so-called von Neumann bottleneck cannot satisfy the demand for real-time processing of rapidly growing data. Memristive in-memory computing is a promising candidate for highly efficient data processing. However, performance of memristors varies significantly because of microstructure change induced by electric-driven matter migration. Here, we propose an all-optically controlled (AOC) memristor with a simple Au/ZnO/Pt sandwich structure based on a purely electronic tuning mechanism of memconductance. The memconductance can be reversibly tuned only by light irradiation with different wavelengths. The device can be used to perform in-memory computation such as nonvolatile neuromorphic computing and Boolean logic functions. Moreover, no microstructure change is involved during the operation of our AOC memristor which demonstrates superior operation stability. Based on this and its structural simplicity, the device has attractive application prospects for the next generation of computing systems.
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Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is generally a two-terminal electronic element with conductance that varies nonlinearly with external electric stimuli and can be remembered when the electric power is turned off. As an alternative, light can be used to tune the memconductance and endow a memristor with a combination of the advantages of both photonics and electronics. Both increases and decreases in optically induced memconductance have been realized in different memristors; however, the reversible tuning of memconductance with light in the same device remains a considerable challenge that severely restricts the development of optoelectronic memristors. Here we describe an all-optically controlled (AOC) analog memristor with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. Our memristor is based on the relatively mature semiconductor material InGaZnO (IGZO) and a memconductance tuning mechanism of light-induced electron trapping and detrapping. We demonstrate that spike-timing-dependent plasticity (STDP) learning can be realized in our device, indicating its potential applications in AOC spiking neural networks (SNNs) for highly efficient optoelectronic neuromorphic computing.
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.
We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
Brain-inspired neuromorphic computing which consist neurons and synapses, with an ability to perform complex information processing has unfolded a new paradigm of computing to overcome the von Neumann bottleneck. Electronic synaptic memristor devices which can compete with the biological synapses are indeed significant for neuromorphic computing. In this work, we demonstrate our efforts to develop and realize the graphene oxide (GO) based memristor device as a synaptic device, which mimic as a biological synapse. Indeed, this device exhibits the essential synaptic learning behavior including analog memory characteristics, potentiation and depression. Furthermore, spike-timing-dependent-plasticity learning rule is mimicked by engineering the pre- and post-synaptic spikes. In addition, non-volatile properties such as endurance, retentivity, multilevel switching of the device are explored. These results suggest that Ag/GO/FTO memristor device would indeed be a potential candidate for future neuromorphic computing applications. Keywords: RRAM, Graphene oxide, neuromorphic computing, synaptic device, potentiation, depression
We present new computational building blocks based on memristive devices. These blocks, can be used to implement either supervised or unsupervised learning modules. This is achieved using a crosspoint architecture which is an efficient array implementation for nanoscale two-terminal memristive devices. Based on these blocks and an experimentally verified SPICE macromodel for the memristor, we demonstrate that firstly, the Spike-Timing-Dependent Plasticity (STDP) can be implemented by a single memristor device and secondly, a memristor-based competitive Hebbian learning through STDP using a $1times 1000$ synaptic network. This is achieved by adjusting the memristors conductance values (weights) as a function of the timing difference between presynaptic and postsynaptic spikes. These implementations have a number of shortcomings due to the memristors characteristics such as memory decay, highly nonlinear switching behaviour as a function of applied voltage/current, and functional uniformity. These shortcomings can be addressed by utilising a mixed gates that can be used in conjunction with the analogue behaviour for biomimetic computation. The digital implementations in this paper use in-situ computational capability of the memristor.
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