No Arabic abstract
We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS)/CoFe interface. First-principles ballistic transport calculations based on Landauer formula for (001)-CoFe/CFMS/CoFe indicate strong spin-dependent conductance at the CFMS/CoFe interface, suggesting large interface spin-scattering asymmetry coefficient ($gamma$). Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin-valve (PSV) devices involving CoFe/CFMS/Ag/CFMS/CoFe structures exhibit an enhancement in magnetoresistance output owing to the formation of the CFMS/CoFe interface at room temperature (RT). This is well reproduced qualitatively by a simulation based on a generalized two-current series-resistor model with taking the presence of $gamma$ at the CFMS/CoFe interface, half-metallicity of CFMS, and combinations of terminated atoms at the interfaces in the CPP-GMR PSV structure. We show direct evidence for large $gamma$ at a half-metallic FM/FM interface and its impact on CPP-GMR effect even at RT.
We demonstrate that combining standing-wave (SW) excitation with resonant inelastic x-ray scattering (RIXS) can lead to depth resolution and interface sensitivity for studying orbital and magnetic excitations in correlated oxide heterostructures. SW-RIXS has been applied to multilayer heterostructures consisting of a superconductor La$_{1.85}$Sr$_{0.15}$CuO$_{4}$(LSCO) and a half-metallic ferromagnet La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO). Easily observable SW effects on the RIXS excitations were found in these LSCO/LSMO multilayers. In addition, we observe different depth distribution of the RIXS excitations. The magnetic excitations are found to arise from the LSCO/LSMO interfaces, and there is also a suggestion that one of the dd excitations comes from the interfaces. SW-RIXS measurements of correlated-oxide and other multilayer heterostructures should provide unique layer-resolved insights concerning their orbital and magnetic excitations, as well as a challenge for RIXS theory to specifically deal with interface effects.
We measured the Raman spectra of ferromagnetic nearly half metal CoS2 in a broad temperature range. All five Raman active modes Ag, Eg, Tg(1), Tg(2) and Tg(3) were observed. The magnetic ordering is indicated by a change of the temperature dependences of the frequency and the line width of Ag and T g(2) modes at the Curie point. The temperature dependence of the frequencies and linewidths of the Ag, Eg, Tg(1), T g(2) modes in the paramagnetic phase can be described in the framework of the Klemens approach. Hardening of the Tg(2), Tg(1) and A g modes on cooling can be unambiguously seen in the ferromagnetic phase. The linewidths of Tg(2) and Ag modes behave a natural way at low exciting laser power (decrease with decreasing temperature) in the ferromagnetic phase. At high exciting laser power the corresponding linewidths increase at temperature decreasing below the Curie temperature. Then as can be seen the line width of Ag mode reaches a maxima at about 80K. This intriging feature probably signifies a specific channel of the optical phonon decay in the ferromagnetic phase of CoS2. Tentative explanations of some of the observed effects are given, taking into account the nearly half metallic nature of CoS2.
We investigate the charge and spin transport in half-metallic ferromagnet ($F$) and superconductor ($S$) nanojunctions. We utilize a self-consistent microscopic method that can accommodate the broad range of energy scales present, and ensures proximity effects that account for the interactions at the interfaces are accurately determined. Two experimentally relevant half-metallic junction types are considered: The first is a $F_1 F_2 S$ structure, where a half-metallic ferromagnet $F_1$ adjoins a weaker conventional ferromagnet $F_2$. The current is injected through the $F_1$ layer by means of an applied bias voltage. The second configuration involves a $S F_1 F_2 F_3 S$ Josephson junction whereby a phase difference $Deltavarphi$ between the two superconducting electrodes generates the supercurrent flow. In this case, the central half-metallic $F_2$ layer is surrounded by two weak ferromagnets $F_1$ and $F_3$. By placing a ferromagnet with a weak exchange field adjacent to an $S$ layer, we are able to optimize the conversion process in which opposite-spin triplet pairs are converted into equal-spin triplet pairs that propagate deep into the half-metallic regions in both junction types. For the tunnel junctions, we study the bias-induced local magnetization, spin currents, and spin transfer torques for various orientations of the relative magnetization angle $theta$ in the $F$ layers. We find that the bias-induced equal-spin triplet pairs are maximized in the half-metal for $thetaapprox90^circ$ and as part of the conversion process, are anticorrelated with the opposite-spin pairs. We show that the charge current density is maximized, corresponding to the occurrence of a large amplitude of equal-spin triplet pairs, when the exchange interaction of the weak ferromagnet is about $0.1E_F.$
Using density functional theory we have performed theoretical investigations of the electronic properties of a free-standing one-dimensional organometallic vanadium-benzene wire. This system represents the limiting case of multi-decker V_n(C6H6)_{n+1} clusters which can be synthesized. We predict that the ground state of the wire is a 100% spin-polarized ferromagnet (half-metal). Its density of states is metallic at the Fermi energy for the minority electrons and shows a semiconductor gap for the majority electrons. We found that the half-metallic behavior is conserved up to 12%, longitudinal elongation of the wire. However, under further stretching, the system exhibits a transition to a high-spin ferromagnetic state that is accompanied by an abrupt jump of the magnetic moment and a gain of exchange energy.
We consider electron transport in a nearly half-metallic ferromagnet, in which the minority spin electrons close to the band edge at the Fermi energy are Anderson-localized due to disorder. For the case of spin-flip scattering of the conduction electrons due to the absorption and emission of magnons, the Boltzmann equation is exactly soluble to the linear order. From this solution we calculate the temperature dependence of the resistivity due to single magnon processes at sufficiently low temperature, namely $k_BTll D/L^2$, where $L$ is the Anderson localization length and $D$ is the magnon stiffness. And depending on the details of the minority spin density of states at the Fermi level, we find a $T^{1.5}$ or $T^{2}$ scaling behavior for resistivity. Relevance to the doped perovskite manganite systems is discussed.