No Arabic abstract
In a blueprint for topological quantum electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. While finite-size effects have been widely studied in 2D-Xenes, less attention has been devoted to finite-size effects on the gate-induced topological switching in spin-orbit coupled 2D-Xene nanoribbons. Here, by studying width dependence of electronic properties via a tight binding model, we demonstrate that finite-size effects can be used to optimize both the spin-orbit interaction induced barrier in the bulk and the gate-controlled quantized conductance on the edges of zigzag-Xene nanoribbons. The critical electric field required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. This size dependence of the threshold voltage stems from a unique feature of zigzag-Xene nanoribbons: width and momentum dependent tunability of the gate-induced coupling between overlapping spin-filtered chiral states on the two edges. Furthermore, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk band gap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases nontrivial bulk band gap with decrease in width. Such reduction in threshold voltage accompanied by enhancement in bulk band gap overturns the conventional wisdom of utilizing wide channel and narrow gap semiconductors for reducing threshold voltage in standard field effect transistor analysis and paves the way towards next-generation low-voltage topological quantum devices.
We present a theoretical study of a nanowire made of a three-dimensional topological insulator. The bulk topological insulator is described by a continuum-model Hamiltonian, and the cylindrical-nanowire geometry is modelled by a hard-wall boundary condition. We provide the secular equation for the eigenergies of the systems (both for bulk and surface states) and the analytical form of the energy eigenfunctions. We describe how the surface states of the cylinder are modified by finite-size effects. In particular, we provide a $1/R$ expansion for the energy of the surface states up to second order. The knowledge of the analytical form for the wavefunctions enables the computation of matrix elements of any single-particle operators. In particular, we compute the matrix elements of the optical dipole operator, which describe optical absorption and emission, treating intra- and inter-band transition on the same footing. Selection rules for optical transitions require conservation of linear momentum parallel to the nanowire axis, and a change of $0$ or $pm 1$ in the total-angular-momentum projection parallel to the nanowire axis. The magnitude of the optical-transition matrix elements is strongly affected by the finite radius of the nanowire.
Quantum size effects in armchair graphene nano-ribbons (AGNR) with hydrogen termination are investigated via density functional theory (DFT) in Kohn-Sham formulation. Selection rules will be formulated, that allow to extract (approximately) the electronic structure of the AGNR bands starting from the four graphene dispersion sheets. In analogy with the case of carbon nanotubes, a threefold periodicity of the excitation gap with the ribbon width (N, number of carbon atoms per carbon slice) is predicted that is confirmed by ab initio results. While traditionally such a periodicity would be observed in electronic response experiments, the DFT analysis presented here shows that it can also be seen in the ribbon geometry: the length of a ribbon with L slices approaches the limiting value for a very large width 1 << N (keeping the aspect ratio small N << L) with 1/N-oscillations that display the electronic selection rules. The oscillation amplitude is so strong, that the asymptotic behavior is non-monotonous, i.e., wider ribbons exhibit a stronger elongation than more narrow ones.
As a model for describing finite-size effects in topological insulator thin films, we study a one-dimensional (1D) effective model of a topological insulator (TI). Using this effective 1D model, we reveal the precise correspondence between the spatial profile of the surface wave function, and the dependence of the finite-size energy gap on the thickness (Lx) of the film. We solve the boundary problem both in the semi-infinite and slab geometries to show that the Lx-dependence of the size gap is a direct measure of the amplitude of the surface wave function at the depth of x=Lx+1 [here, the boundary condition is chosen such that the wave function vanishes at x=0]. Depending on the parameters, the edge state function shows either a damped oscillation (in the TI-oscillatory region of FIG. 2, or becomes overdamped (ibid., in the TI-overdamped phase). In the original 3D bulk TI, an asymmetry in the spectrum of valence and conduction bands is omnipresent. Here, we demonstrate by tuning this asymmetry one can drive a crossover from the TI-oscillatory to the TI-overdamped phase.
The interest in the topological properties of materials brings into question the problem of topological phase transitions. As a control parameter is varied, one may drive a system through phases with different topological properties. What is the nature of these transitions and how can we characterize them? The usual Landau approach, with the concept of an order parameter that is finite in a symmetry broken phase is not useful in this context. Topological transitions do not imply a change of symmetry and there is no obvious order parameter. A crucial observation is that they are associated with a diverging length that allows a scaling approach and to introduce critical exponents which define their universality classes. At zero temperature the critical exponents obey a quantum hyperscaling relation. We study finite size effects at topological transitions and show they exhibit universal behavior due to scaling. We discuss the possibility that they become discontinuous as a consequence of these effects and point out the relevance of our study for real systems.
The non-trivialness of a topological insulator (TI) is characterized either by a bulk topological invariant or by the existence of a protected metallic surface state. Yet, in realistic samples of finite size this non-trivialness does not necessarily guarantee the gaplessness of the surface state. Depending on the geometry and on the topological indices, a finite-size energy gap of different nature can appear, and correspondingly, exhibits various scaling behaviors of the gap. The spin-to-surface locking provides one of such gap-opening mechanisms, resulting in a power-law scaling of the energy gap. Weak and strong TIs show different degrees of sensitivity to the geometry of the sample. As a noteworthy example, a strong TI nanowire of a rectangular prism shape is shown to be more gapped than that of a weak TI of precisely the same geometry.