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Register a new userReal-space nanoimaging of THz polaritons in the topological insulator Bi2Se3
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Dirac plasmon polaritons in topological insulators (TIs),light coupled to massless Dirac electrons, have been attracting a large amount of attention, both from a fundamental perspective and for potential terahertz (THz) photonic applications. Although THz polaritons have been observed by far-field THz spectroscopy on TI microstructures, real-space imaging of propagating THz polaritons in unstructured TIs has been elusive so far. Here, we show the very first spectroscopic THz near-field images of thin Bi2Se3 layers (prototypical TIs) revealing polaritons with up to 12 times increased momenta as compared to photons of the same energy and decay times of about 0.24 ps, yet short propagation lengths. From the near-field images we determine the polariton dispersions in layers from 120 to 25 nm thickness and perform a systematic theoretical dispersion analysis, showing that the observed polaritons can be explained only by the simultaneous coupling of THz radiation to Dirac carriers at the TI surfaces, massive bulk carriers and optical phonons. Our work does not only provide critical insights into the nature of THz polaritons in TIs, but also establishes instrumentation of unprecedented sensitivity for imaging of THz polaritons.
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yperbolic polaritons in van der Waals materials recently attract a lot of attention, owing to their strong electromagnetic field confinement, ultraslow group velocities and long lifetimes. Typically, volume confined hyperbolic polaritons (HPs) are studied. Here we show the first near-field optical images of hyperbolic surface polarities, HSPs, which are confined and guided at the edges of thin flakes of a vdW material. To that end, we applied scattering-type scanning near-field optical microscopy (s-SNOM) for launching and real-space nanoimaging of hyperbolic surface phonon polariton modes on a hexagonal boron nitride, h-BN, flake. Our imaging data reveal that the fundamental HSP mode exhibits stronger field confinement, smaller group velocities and nearly identical lifetimes, as compared to the fundamental HP mode of the same h-BN flake. Our experimental data, corroborated by theory, establish a solid basis for future studies and applications of HPs and HSPs in vdW materials.
We investigate the ultrafast transient absorption spectrum of Bi2Se3 topological insulator. Bi2Se3 single crystal is grown through conventional solid-state reaction routevia self-flux method. The structural properties have been studied in terms of high-resolution Powder X-ray Diffraction (PXRD). Detailed Rietveld analysis of PXRD of the crystal showed that sample is crystallized in the rhombohedral crystal structure with a space group of R-3m, and the lattice parameters are a=b=4.14A and c=28.7010A. Scanning Electron Microscopy (SEM) result shows perfectly crystalline structure with layered type morphology which evidenced from surface XRD. Energy Dispersive Spectroscopy (EDS) analysis determined quantitative amounts of the constituent atoms, found to be very close to their stoichiometric ratio. Further the fluence dependent nonlinear behaviour is studied by means of ultrafast transient absorption spectroscopy. The ultrafast spectroscopy also predicts the capability of this single crystal to generate Terahertz (THz) radiations (T-rays).
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale potential fluctuation in single crystals of archetypal topological insulator Bi2Se3. Here it is established that the defect concentrations in Bi2Se3 are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.
We present a magneto-infrared spectroscopic study of thin Bi2Se3 single crystal flakes. Magneto-infrared transmittance and reflectance measurements are performed in the Faraday geometry at 4.2K in a magnetic field up to 17.5T. Thin Bi2Se3 flakes (much less than 1{mu}m thick) are stabilized on the Scotch tape, and the reduced thickness enables us to obtain appreciable far-infrared transmission through the highly reflective Bi2Se3 single crystals. A pronounced electron-phonon coupling is manifested as a Fano resonance at the {alpha} optical phonon mode in Bi2Se3, resulting from the quantum interference between the optical phonon mode and the continuum of the electronic states. However, the Fano resonance exhibits no systematic line broadening, in contrast to the earlier observation of a similar Fano resonance in Bi2Se3 using magneto-infrared reflectance spectroscopy.
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