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Layered Metals as Polarized Transparent Conductors

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 Added by Carsten Putzke
 Publication date 2021
  fields Physics
and research's language is English




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The quest to improve transparent conductors balances two key goals: increasing electrical conductivity and increasing optical transparency. To improve both simultaneously is hindered by the physical limitation that good metals with high electrical conductivity have large carrier densities that push the plasma edge into the ultra-violet range. Transparent conductors are compromises between electrical conductivity, requiring mobile electrons, and optical transparency based on immobile charges to avoid screening of visible light. Technological solutions reflect this trade-off, achieving the desired transparencies by reducing the conductor thickness or carrier density at the expense of a lower conductance. Here we demonstrate that highly anisotropic crystalline conductors offer an alternative solution, avoiding this compromise by separating the directions of conduction and transmission. Materials with a quasi-two-dimensional electronic structure have a plasma edge well below the range of visible light while maintaining excellent in-plane conductivity. We demonstrate that slabs of the layered oxides Sr$_2$RuO$_4$ and Tl$_2$Ba$_2$CuO$_{6+delta}$ are optically transparent even at macroscopic thicknesses >2$mu$m for c-axis polarized light. Underlying this observation is the fabrication of out-of-plane slabs by focused ion beam milling. This work provides a glimpse into future technologies, such as highly polarized and addressable optical screens, that advancements in a-axis thin film growth will enable.



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Transparent conductors-nearly an oxymoron-are in pressing demand, as ultra-thin-film technologies become ubiquitous commodities. As current solutions rely on non-abundant elements, perovskites such as SrVO3 and SrNbO3 have been suggested as next generation transparent conductors. Our ab-initio calculations and analytical insights show, however, that reducing the plasma frequency below the visible spectrum by strong electronic correlations-a recently proposed strategy-unavoidably comes at a price: an enhanced scattering and thus a substantial optical absorption above the plasma edge. As a way out of this dilemma we identify several perovskite transparent conductors, relying on hole doping, somewhat larger bandwidths and separations to other bands.
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Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are important because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). Less obvious is the fact that the non-emissive triplet states are spin-polarized, e.g., by charge injection, and spin-selection rules prevent part of the triplet population from RISC. To explore the relationship between these two processes, we apply a two-frequency spin-resonance technique, which is essentially spectral hole burning, that directly probes electroluminescence. This allows us not only to independently confirm high spin-polarization, but also to distinguish between individual triplet exciplex states distributed in the OLED emissive layer. These states can be decoupled from the heterogeneous nuclear environment as a source of spin dephasing and can even be coherently manipulated on a spin-spin relaxation time scale T2* of 30 ns. Furthermore, we obtain the characteristic spin-lattice relaxation time T1 of the triplet exciplex in the range of 50 us, which is longer than the RISC time. We conclude that long spin relaxation time rather than RISC is an efficiency-limiting step for intermolecular donor:acceptor systems. Finding TADF emitters with faster spin relaxation will benefit this type of TADF OLEDs.
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