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Entangled Quantum Memristors

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 Publication date 2021
  fields Physics
and research's language is English




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We propose the interaction of two quantum memristors via capacitive and inductive coupling in feasible superconducting circuit architectures. In this composed system the input gets correlated in time, which changes the dynamic response of each quantum memristor in terms of its pinched hysteresis curve and their nontrivial entanglement. In this sense, the concurrence and memristive dynamics follow an inverse behavior, showing maximal values of entanglement when the hysteresis curve is minimal and vice versa. Moreover, the direction followed in time by the hysteresis curve is reversed whenever the quantum memristor entanglement is maximal. The study of composed quantum memristors paves the way for developing neuromorphic quantum computers and native quantum neural networks, on the path towards quantum advantage with current NISQ technologies.



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A quantum memristor is a resistive passive circuit element with memory engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated through a weak measurement scheme and classical feedback on the system. In quantum photonics, such a device can be designed from a beam splitter with tunable reflectivity, which is modified depending on the results of measurements in one of the outgoing beams. Here, we show that a similar implementation can be achieved with frequency-entangled optical fields and a frequency mixer that, working similarly to a beam splitter, produces state superpositions. We show that the characteristic hysteretic behavior of memristors can be reproduced when analyzing the response of the system with respect to the control, for different experimentally-attainable states. Since memory effects in memristors can be exploited for classical and neuromorphic computation, the results presented in this work provides the first steps of a novel route towards constructing quantum neural networks in quantum photonics.
Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. The proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
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